Allicdata Part #: | 2SK2503TLTR-ND |
Manufacturer Part#: |
2SK2503TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 5A DPAK |
More Detail: | N-Channel 60V 5A (Ta) 20W (Tc) Surface Mount CPT3 |
DataSheet: | 2SK2503TL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 520pF @ 10V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 135 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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2SK2503TL Application Field and Working Principle
The 2SK2503TL is a dual gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Toshiba’s Silicon EX series. It is one of the most reliable and versatile components used in switching and amplification applications, with advanced features that make it suitable for both industrial and commercial applications.
The 2SK2503TL is usually housed in a metal can or metal-oxide-semiconductor (MOS) package. It can be used to control the switching operation of an AC load with great accuracy. Its features and characteristics make it suitable for a variety of applications, ranging from radio frequency (RF) communication systems to automotive and industrial applications.
The 2SK2503TL is capable of providing excellent noise immunity and current capabilities. Its low-on/off resistance ratio of about 80V/\muA makes it suitable for switching applications. It has a high breakdown voltage of 160V and a very low forward voltage of only 1.65V. This allows the 2SK2503TL to operate at very high frequencies. Its high-speed toggle function enables it to be used in a variety of switching applications such as communication systems, power electronic controllers, and motor drives.
The 2SK2503TL’s two-gate structure enables it to be used for both amplification and switching purposes. The two gates can be independently controlled, providing versatile control of the device. This allows the device to be used in any applications that require both amplification and switching.
The working principle of a dual gate MOSFET can be explained using a simple analogy. Suppose a toy car is placed on a tabletop with two levers. When the levers are both pressed, the car will move in whichever direction corresponds to the direction of the levers’ movement. Similarly, if a voltage is applied to one gate, the 2SK2503TL will “switch” on; if a voltage is applied to the other gate, the device will “switch” off.
The 2SK2503TL’s dual gate structure and low-voltage operation make it suitable for use in a variety of applications, including logic circuits, motor controllers, and power supplies. Its high-speed toggle feature also makes it suitable for data transmission and communication systems. The device can also be used in power electronics and automotive applications.
The 2SK2503TL is an excellent choice for a variety of projects, from small hobby projects to commercial designs. Its high-performance, low-voltage operation, and dual gate structure make it an ideal choice for applications that require efficient power management. With the right design and implementation, the 2SK2503TL can be used effectively in any application.
The specific data is subject to PDF, and the above content is for reference
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