Allicdata Part #: | 2SK23800QLTR-ND |
Manufacturer Part#: |
2SK23800QL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | JFET N-CH 1MA 125MW SSMINI-3 |
More Detail: | JFET N-Channel 1mA 125mW Surface Mount SSMini3-F2 |
DataSheet: | 2SK23800QL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 50µA @ 10V |
Current Drain (Id) - Max: | 1mA |
Voltage - Cutoff (VGS off) @ Id: | 1.3V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 1pF @ 10V |
Power - Max: | 125mW |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F2 |
Base Part Number: | 2SK2380 |
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The 2SK23800QL is a depletion mode Junction Field Effect Transistor (JFET). It has a very low threshold voltage and is categorized as an amplifier transistor. The device is suitable for low frequency, linear and computing applications.
The 2SK23800QL is a four-terminal device with an N-channel construction, where a small voltage along the gate-to-source (VGS) produces a large current along the drain-to-source (VDS). It is designed to operate with a low VGS of 1.3V and high speed switching. The 2SK23800QL has a maximum VDS (drain-source voltage) of 30V and a drain current of 10A to 25A.
The 2SK23800QL is part of a family of high-speed, high-voltage switching transistors that are well-suited for various load applications. They are often found in Electronic Control Units (ECUs) used to control a variety of electronic systems such as ignitions, fuel injection, and many other applications.
It can also be used in power MOSFET (metal-oxide-semiconductor field-effect-transistor) drivers. MOSFETs are typically found in power converters, such as DC to AC inverters, as well as amplifiers and other power supplies. The 2SK23800QL enhances the switching performance of the power MOSFETs with its low gate-to-source capacitance, low on-resistance, and high gate-source breakdown voltage. Its low gate-to-source capacitance and high gate-source breakdown voltage enable the circuit to operate with a faster rise and fall times, which increases the power efficiency of the system.
The working principle of the 2SK23800QL is the same as other JFETs. The body of the device acts as a semiconductor element, with the drain and source currents determined by the charge carriers in the conducting channel between them. The source-gate junction forms a depletion layer that allows the current between the source and drain to be controlled. By applying a voltage to the gate terminal, the width of the depletion layer is adjusted and the current between drain and source is reduced.
The 2SK23800QL can be used in many applications due its low voltage, high speed switching, and high drain current. It can be used for DC motor control, power supplies, power conversion, and many other applications where its high-speed switching capabilities make it ideal.
In summary, the 2SK23800QL is a depletion mode Junction Field Effect Transistor (JFET) with a very low threshold voltage. Its low gate-to-source capacitance, low on-resistance, and high gate-source breakdown voltage make it suitable for many low frequency, linear and computing applications. Its working principle is the same as other JFETs, with a depletion layer permitting the current between drain and source to be controlled by applying a voltage to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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