Allicdata Part #: | 2SK2962T6F(J-ND |
Manufacturer Part#: |
2SK2962,T6F(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH |
More Detail: | Through Hole TO-92MOD |
DataSheet: | 2SK2962,T6F(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Bulk |
Part Status: | Obsolete |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92MOD |
Package / Case: | TO-226-3, TO-92-3 Long Body |
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The 2SK2962 and T6F(J are particular types of transistor belonging to a category named FETs, MOSFETs, Single. They are common types of semiconductor components and have become widely utilized elements within many devices requiring amplification, switching and current regulation purposes.
FETs which stand for Field Effect Transistors are a type of transistor that produce an amplifying effect based on a voltage or electrical current. They are able to produce a high power output while using a relatively small amount of energy, making them utilized across many fields where management is required of higher currents and a high level of power. MOSFETs are a sub category of such field effect transistors and are typicaly utilized for switching, amplification and voltage regulation tasks. A MOSFet is actually an acronym for ‘Metal Oxide Semiconductor Field Effect Transistor’.
The 2SK2962 and T6F(J are single-operation types of MOSFET. This means they feature one electrical control of one current and are able to handle voltages up to 100V, allowing them to be used in both general and use cases. More specifically the 2SK2962 is a P-channel MOSFET indicating a fact that the field effect caused by the transistor is of the positive type whereas the T6F(J is an N-channel MOSFET, meaning that the field effect is of the negative type. They belong to the MOS family and use a gate voltage to determine resistance of the component.
The two types of transistor have several common applications and can be used in instances such as:
- Power Management circuits where it is vital to have accurate control of power signals
- Switching currents in circuits where compact and efficient electrical signals are required
- Displacing excessive current in power amplifiers in order to protect from short circuiting
- Inverters and other power supply systems
- Logic circuits for determining the output of specific signals and choices
The core understanding of these transistors is that they both require a triggering source in order to activate. This can be done by applying a positive or negative voltage or current to their gate terminal which can then cause the transistor to either switch on or off, allowing current in and out of the device. This makes them useful as building blocks to larger electrical systems such as microprocessors, amplifiers and computers.
The two types of transistors often suffer in terms of a low speed reactivity, meaning that it takes some time for the transistors to turn on and off and this might affect the timing and efficiency of certain application, where power switches between 0V and the rated voltage more rapidly. Another issue with the transistors is that when important information passes through their gate terminals, they have a tendency of holding onto the impulse and not allowing it through, possibly causing a time lag between information entry and movement. Thus users have to take into consideration the choice of transistors when building an electrical system where timing is key and speed is a necessity.
To conclude, the 2SK2962 and T6F(J are particular types of transistors that belong to a class of transistors known as MOSFET, single. They are able to work with higher voltages, up to 100V, and are accustomed to regulating electrical signals, currents and powering other devices or circuit. Due to their limited reactivity, they are preferred in low frequency applications and they can most commonly be found in power management circuits, logic devices, power amplifiers and inverters. Overall, they are useful building blocks of many electrical systems while also featuring a variety of applications and features.
The specific data is subject to PDF, and the above content is for reference
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2SK2221-E | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 200V 8A TO-3P... |
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2SK2504TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 100V 5A DPAKN... |
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2SK2887TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 200V 3A DPAKN... |
2SK2719(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 900V 3A TO-3P... |
2SK2847(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 900V 8A TO-3P... |
2SK2916(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 500V 14A TO-3... |
2SK2917(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 500V 18A TO-3... |
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2SK2995(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 250V 30A TO-3... |
2SK2962(T6CANO,A,F | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962(T6CANO,F,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962(TE6,F,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
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2SK2962,T6F(M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
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