2SK2376(Q)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2SK2376(Q) is a field effect transistor (FET) that belongs to the family of FETs and MOSFETs and is known as single FET transistor. It is used in different applications such as power supplies and DC-DC converters. This type of FET is highly common in the automotive industry, industrial, and medical industries. The 2SK2376(Q) FET is a voltage controlled, depletion type MOSFET and is produced using Toshiba’s advanced DTMOS process.

The 2SK2376(Q) FET is used as a switching element and is designed to operate under a wide range of voltages and current ratings. It has an ultra-high breakdown voltage of up to 550V. This ensures that the device can reliably handle high voltage applications. The 2SK2376(Q) also has a low on-state resistance, which allows it to operate in higher power switch applications.

The 2SK2376(Q) FET is designed to operate in a variety of applications such as circuit protection, high voltage power supplies, dc-dc converters, and motor control. It is also used for automotive applications in car TV tuners, car navigation systems, car audio systems and other automotive applications. The device has a low switching capacitance and low gate threshold voltage which make it suitable for high-speed switching.

The working principle behind the 2SK2376(Q) FET is quite simple. The device consists of a source, a drain and a gate. The gate is connected to the source and the drain. When voltage is applied to the gate, it will create an electric field between the source and the drain, which will cause electrons to flow between them. This phenomenon is known as the channel effect, and it is the basis of operation for the 2SK2376(Q).

The 2SK2376(Q) FET is a great choice for a wide range of applications. It is a highly reliable device capable of withstanding high voltage and current levels. The device has a low on-state resistance, and its low switching capacitance make it suitable for high-speed switching. The FET also operates using the depletion type of MOSFET technology, which ensures that it performs reliably in all operating conditions.

The specific data is subject to PDF, and the above content is for reference