2SK2221-E

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2SK2221-E is a single-junction field effect transistor (FET), a kind of transistor that utilizes an electric field to control the conductivity of a semiconductor, allowing voltage to be regulated in a circuit. This type of transistor targets high-frequency applications, and its superior high frequency characteristics and low input capacitance make it well-suited for use in vertical deflection output stages of TV and video monitors, as well as vertical output stages of switching power supplies.

FETs are three-terminal devices and can be thought of as being analogous to vacuum tubes. They are usually found in integrated circuits and are capable of amplifying or switching signals. The 2SK2221-E uses a voltage applied to its gate terminal to control the flow of current through its drain and source terminals.

In a 2SK2221-E, the gate terminal is totally insulated from the channel created between the drain and the source by a thin layer of silicon dioxide. This layer isolates the gate from the channel and protects it from physical contaminants such as dust particles. The gate voltage modulates the cross-sectional area of the channel, and the current flowing through the channel (drain-source current) can be adjusted by altering the gate voltage.

Furthermore, the gate terminal of the 2SK2221-E is surrounded by a three-layer structure which not only helps to isolate it from the channel but also helps to control the threshold voltage at which the channel is created. This feature gives the 2SK2221-E a very low on-state resistance of 1.7Ω, making it ideal for applications where a low forward voltage drop is required.

When forward biased, the 2SK2221-E has a very low turn-on voltage, meaning that it can be easily switched on and off using a low-voltage control signal. This allows for faster switching speeds, making it particularly useful in faster switching applications such as switch mode power supplies and high-frequency digital logic circuits. Additionally, its high maximum drain current rating allows it to be used in high load applications.

In addition to its low on-state resistance and low turn-on voltage, the 2SK2221-E also has a much higher reverse transfer capacitance than other FETs. This is because the gate is physically located in the middle of the channel between the drain and source. This allows the FET to have better voltage blocking capabilities and higher frequencies. Thus, the 2SK2221-E is an excellent choice for applications that require higher frequency operation, such as radio-frequency amplifiers and high-frequency switching circuits.

Overall, the 2SK2221-E is a versatile FET with a low on-state resistance and low turn-on voltage, making it suitable for a variety of applications from low-load to high-load. Its high maximum drain current rating, combined with its low gate capacitance, make it ideal for use in high-frequency or high-load applications. Its three-layer structure and reverse transfer capacitance also make it uniquely suitable for high-frequency radio frequency applications.

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