2SK2394-6-TB-E Discrete Semiconductor Products |
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Allicdata Part #: | 2SK2394-6-TB-EOSTR-ND |
Manufacturer Part#: |
2SK2394-6-TB-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 50MA 200MW CP |
More Detail: | JFET N-Channel 50mA 200mW Surface Mount 3-CP |
DataSheet: | 2SK2394-6-TB-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 15V |
Current - Drain (Idss) @ Vds (Vgs=0): | 10mA @ 5V |
Current Drain (Id) - Max: | 50mA |
Voltage - Cutoff (VGS off) @ Id: | 300mV @ 100µA |
Input Capacitance (Ciss) (Max) @ Vds: | 10pF @ 5V |
Power - Max: | 200mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
2SK2394-6-TB-E transistors are Junction Field-Effect Transistors (JFETs). They have a high input impedance, low output impedance, wide bandwidth and low noise. These characteristics make them useful for a variety of applications including amplifiers, buffers, switches and analog signal processing. They are also used in many electronic devices such as computers, phones, and radios.
The basic structure of a JFET is made up of three semiconductor layers, two of which are N-type and one P-type. This creates an N-channel JFET or a P-Channel JFET, with the 2SK2394-6-TB-E transistors being an N-channel JFET. The layers are arranged so that the N-type layers are on the sides and the P-type layer is in the middle to form a junction between them. The arrangement of network creates a channel in the middle through which current flows when a voltage is applied to the device.
The channels are not just made of semiconductor material, but also contain a few small impurities of either phosphorus or boron. The process of adding these impurities is called doping. Doping is used to alter the electrical properties of the JFET, to use as either an amplifier or a switch. Depending on the type of impurities added, the transistor will either increase (amplify) or decrease (switch) the voltage applied across its gate.
When voltage is applied to the gate, the electric field created causes the current between the drain and source to change. This is because the gate voltage affects the width of the channel created by the impurities, which in turn affects the amount of current that can flow through it. This is the basic principle of how a JFET works.
The 2SK2394-6-TB-E transistors can be used in a variety of applications, including switching power supplies, voltage regulation, protection circuits, current limiting, and even for audio mixing and signal processing. It is widely used in most electronic devices, as it provides high input impedance, low output impedance and low noise. It is also suitable for applications which require very accurate current levels, as it has high gain and low noise.
In conclusion, the 2SK2394-6-TB-E transistors are a type of Junction Field-Effect Transistor. They are widely used in many applications because of their ability to amplify or switch a signal with a minimum of distortion. They are also a very cost-effective solution for many applications, as they are much more reliable than other transistor types. So if you need a cost-effective solution for your application, the 2SK2394-6-TB-E transistors are a great choice.
The specific data is subject to PDF, and the above content is for reference
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