2SK2145-GR(TE85L,F Allicdata Electronics

2SK2145-GR(TE85L,F Discrete Semiconductor Products

Allicdata Part #:

2SK2145-GR(TE85LFTR-ND

Manufacturer Part#:

2SK2145-GR(TE85L,F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET 2N-CH JFET 50V SMV
More Detail: JFET 2 N-Channel (Dual) 300mW Surface Mount SMV
DataSheet: 2SK2145-GR(TE85L,F datasheet2SK2145-GR(TE85L,F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV
Description

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The 2SK2145-GR (TE85L,F) is a field effect transistor (FET) used in a variety of electronic circuits, particularly those dedicated to power management. FETs, which are closely related to bipolar junction transistors, are four-terminal devices—a gate, a source, and two drains—that are used to amplify and switch signals.

The particular 2SK2145-GR (TE85L,F) is manufactured by Toshiba and is constructed using NINOX5 silicon technology. It is an enhancement-mode device, meaning that it is normally off when the gate voltage is at the same voltage as the source voltage. When a voltage is applied to the gate that is higher than the source voltage, the transistor will turn on. This type of FET is also known as an n-channel device because of the way the flow of charge carriers (electrons) occurs through it. As electrons enter the transistor via the source, they form an electric field in the device’s ‘channel’ (or central region), which creates a barrier to further electrons, causing the voltage across the channel to drop.

The 2SK2145-GR (TE85L,F) has a number of uses in field applications. Its low gate capacitance and moderate input resistance make it ideal for high-speed logic level and pulsing applications. Its high transconductance and low transconductance-to-drain resistance ratio make it suitable for low-voltage and low-power amplifiers, and its high speed (fT) also make it suitable for high-frequency applications such as switching power supplies. The device is also frequently used as an on/off switch in many power management applications such as DC-DC converters and computer power supplies. It can also be used as part of a temperature sensor circuit, as it can be accurately tuned to keep devices operating within certain temperature ranges. It is also suitable for switching radio frequency (RF) signals.

The 2SK2145-GR (TE85L,F) is a versatile FET, and its applications span a wide range. From high-speed logic circuits to temperature control and from switching power supplies to RF switching, the device has many uses in the world of electronics. As such, it is an important component for any electronic designer or engineer to be aware of.

The specific data is subject to PDF, and the above content is for reference

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