2SK2394-7-TB-E Discrete Semiconductor Products |
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Allicdata Part #: | 2SK2394-7-TB-EOSTR-ND |
Manufacturer Part#: |
2SK2394-7-TB-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 50MA 200MW CP |
More Detail: | JFET N-Channel 50mA 200mW Surface Mount 3-CP |
DataSheet: | 2SK2394-7-TB-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 15V |
Current - Drain (Idss) @ Vds (Vgs=0): | 16mA @ 5V |
Current Drain (Id) - Max: | 50mA |
Voltage - Cutoff (VGS off) @ Id: | 300mV @ 100µA |
Input Capacitance (Ciss) (Max) @ Vds: | 10pF @ 5V |
Power - Max: | 200mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CP |
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A 2SK2394-7-TB-E transistor is a type of junction gate field-effect transistor (JFET). It is a unipolar field-effect transistor (FET) that has a simple structure that uses a single semiconductor layer for the initial signal and a single dielectric layer for electrical insulation. It is primarily used for signal and low power voltage-controlled amplification, as well as signal inversion, signal splitting, and low noise figure.The 2SK2394-7-TB-E is a type of N-channel JFET with a drain-source on-resistance of 4.2 ohms and a maximum power dissipation of 500mW. The semiconductor material used is silicon, the gate-source voltage range is to -20V, and the 300KHz maximum frequency rate. It is also equipped with an internal diode that protects it from reverse breakdown, as well as a common-source configuration for better operating linearity.The 2SK2394-7-TB-E is widely used in amplifiers and other devices that require low distortion, high efficiency, and low noise. It is also used in radio frequency amplifiers and oscillators, high-frequency switching circuits, and medical instrument systems.In terms of its working principle, the 2SK2394-7-TB-E is a voltage-controlled device that is operated by the gate-source voltage. It is the application of this voltage that leads to the making and breaking of the junction between the drain and source. The current flow between the regions is influenced by the voltage applied to the gate-source junction.The 2SK2394-7-TB-E is a voltage-controlled device and thus works on the principle of controlling the drain-source current by changing the voltage applied to the gate-source junction. When the voltage is increased, the drain-source current increases, and vice versa. This allows the user to make adjustments and control the current according to their needs.The 2SK2394-7-TB-E is also used to adjust the conduction characteristics of the device, thus allowing the user to modify the frequency response of the device. This technique is generally known as frequency compensation. The 2SK2394-7-TB-E is generally used in chopper stabilization circuits, band gap voltage reference circuits, series-stabilizer circuits, and dynamic reset circuits.The 2SK2394-7-TB-E is designed to provide superior performance in terms of low distortion and low noise. It is also designed to offer a fast switching rate, high output current and high voltage capabilities, and to provide high current handling capability. It is suited for a wide range of applications, including radio receivers and amplifiers, switching circuits, medical instrument systems, and power supplies.In summary, the 2SK2394-7-TB-E is a JFET transistor that is used for amplifying signals, inversion, splitting signals, and achieving low noise figures. It is well suited for a wide range of applications, providing superior performance in terms of noise, distortion, and switching rate. The 2SK2394-7-TB-E offers high performance and low power consumption, making it an ideal choice for those looking for a reliable transistor for their electronics.
The specific data is subject to PDF, and the above content is for reference
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