2SK2887TL Discrete Semiconductor Products |
|
Allicdata Part #: | 2SK2887TLTR-ND |
Manufacturer Part#: |
2SK2887TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 200V 3A DPAK |
More Detail: | N-Channel 200V 3A (Ta) 20W (Tc) Surface Mount CPT3 |
DataSheet: | 2SK2887TL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 10V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2SK2887TL is a field effect transistor (FET) from Toshiba\'s 2SK28 range. It is a single, enhancing mode, N-channel MOSFET with a maximum drain-source voltage of 60 volts (Vds) and a drain current of 8 ata (Id). This device is ideal for a wide range of power electronics applications including amplifiers, voltage regulators, and motor control.
The field effect transistor works by controlling an electric current flowing through a semiconductor. It does this by using a gate-source voltage, or Vgs, to control the conductivity of the channel, which can be beneficial for power saving applications. Essentially, the 2SK2887TL allows both a low input impedance and a high output impedance, making it ideal for a range of applications.
The 2SK2887TL can be used in power amplifier design, power supply design, and low frequency applications. Its low input impedance is also beneficial in many applications, as it allows a small amount of current to control a large amount of current to a device.
The 2SK2887TL also has both overload and short circuit protection, making it ideal for higher power applications. This gives it the edge over other FETs, as it is more robust and reliable. The 2SK2887TL is suitable for use in automotive applications, given its high-temperature and low-temperature range.
Furthermore, the 2SK2887TL’s high drain-source voltage (Vds) of 60 Volts gives it the advantage of higher current handling in applications such as high power systems. This makes the 2SK2887TL the ideal choice over other FETs for applications requiring higher power handling capability. It is also suitable for use in low power, high frequency applications.
Finally, the 2SK2887TL has an excellent thermal resistance, as well as a maximum junction temperature of 175°C. This allows it to withstand higher temperatures when used in higher power applications. This makes it an ideal device for use in power management applications. Furthermore, the 2SK2887TL’s low noise and high input impedance make it ideal for signal processing applications.
In conclusion, the 2SK2887TL is an excellent field effect transistor for a variety of applications. Its low input impedance, high drain-source voltage and overload and short circuit protection make it an ideal choice for powerful applications. Additionally, its thermal resistance, low noise and high input impedance make it suitable for use in signal processing and power management applications. As such, the 2SK2887TL is an ideal choice for a wide range of power electronics applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
2SK2266(TE24R,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 60V 45A TO220... |
2SK2376(Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 60V 45A TO220... |
2SK2507(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 50V 25A TO220... |
2SK2544(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 6A TO-22... |
2SK2744(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 50V 45A TO-3P... |
2SK2845(TE16L1,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 900V 1A DPN-C... |
2SK2866(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 10A TO-2... |
2SK2883(TE24L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 800V 3A TO220... |
2SK2035(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 20V 0.1A SSMN... |
2SK2225-E | Renesas Elec... | -- | 1000 | MOSFET N-CH 1500V 2A TO-3... |
2SK2963(TE12L,F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 100V 1A PW-MI... |
2SK2231(TE16R1,NQ) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 60V 5A PW-MOL... |
2SK2221-E | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 200V 8A TO-3P... |
2SK2315TYTR-E | Renesas Elec... | -- | 1000 | MOSFET N-CH 60V 2A 4-UPAK... |
2SK221100L | Panasonic El... | 0.0 $ | 1000 | MOSFET N-CH 30V 1A MINI-P... |
2SK2095N | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 60V 10A TO-22... |
2SK2299N | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 450V 7A TO-22... |
2SK2713 | ROHM Semicon... | -- | 1000 | MOSFET N-CH 450V 5A TO-22... |
2SK2740 | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 600V 7A TO-22... |
2SK2503TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 60V 5A DPAKN-... |
2SK2504TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 100V 5A DPAKN... |
2SK2715TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 500V 2A DPAKN... |
2SK2887TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 200V 3A DPAKN... |
2SK2719(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 900V 3A TO-3P... |
2SK2847(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 900V 8A TO-3P... |
2SK2916(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 500V 14A TO-3... |
2SK2917(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 500V 18A TO-3... |
2SK2967(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 250V 30A TO-3... |
2SK2993(TE24L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 250V 20A TO22... |
2SK2995(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 250V 30A TO-3... |
2SK2962(T6CANO,A,F | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962(T6CANO,F,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962(TE6,F,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962,F(J | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962,T6F(J | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962,T6F(M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962,T6WNLF(J | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962,T6WNLF(M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2989(T6CANO,A,F | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2989(T6CANO,F,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...