2SK2887TL Allicdata Electronics

2SK2887TL Discrete Semiconductor Products

Allicdata Part #:

2SK2887TLTR-ND

Manufacturer Part#:

2SK2887TL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 200V 3A DPAK
More Detail: N-Channel 200V 3A (Ta) 20W (Tc) Surface Mount CPT3
DataSheet: 2SK2887TL datasheet2SK2887TL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The 2SK2887TL is a field effect transistor (FET) from Toshiba\'s 2SK28 range. It is a single, enhancing mode, N-channel MOSFET with a maximum drain-source voltage of 60 volts (Vds) and a drain current of 8 ata (Id). This device is ideal for a wide range of power electronics applications including amplifiers, voltage regulators, and motor control.

The field effect transistor works by controlling an electric current flowing through a semiconductor. It does this by using a gate-source voltage, or Vgs, to control the conductivity of the channel, which can be beneficial for power saving applications. Essentially, the 2SK2887TL allows both a low input impedance and a high output impedance, making it ideal for a range of applications.

The 2SK2887TL can be used in power amplifier design, power supply design, and low frequency applications. Its low input impedance is also beneficial in many applications, as it allows a small amount of current to control a large amount of current to a device.

The 2SK2887TL also has both overload and short circuit protection, making it ideal for higher power applications. This gives it the edge over other FETs, as it is more robust and reliable. The 2SK2887TL is suitable for use in automotive applications, given its high-temperature and low-temperature range.

Furthermore, the 2SK2887TL’s high drain-source voltage (Vds) of 60 Volts gives it the advantage of higher current handling in applications such as high power systems. This makes the 2SK2887TL the ideal choice over other FETs for applications requiring higher power handling capability. It is also suitable for use in low power, high frequency applications.

Finally, the 2SK2887TL has an excellent thermal resistance, as well as a maximum junction temperature of 175°C. This allows it to withstand higher temperatures when used in higher power applications. This makes it an ideal device for use in power management applications. Furthermore, the 2SK2887TL’s low noise and high input impedance make it ideal for signal processing applications.

In conclusion, the 2SK2887TL is an excellent field effect transistor for a variety of applications. Its low input impedance, high drain-source voltage and overload and short circuit protection make it an ideal choice for powerful applications. Additionally, its thermal resistance, low noise and high input impedance make it suitable for use in signal processing and power management applications. As such, the 2SK2887TL is an ideal choice for a wide range of power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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