Allicdata Part #: | 2SK2993(TE24L,Q)-ND |
Manufacturer Part#: |
2SK2993(TE24L,Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 250V 20A TO220SM |
More Detail: | N-Channel 250V 20A (Ta) 100W (Tc) Surface Mount TO... |
DataSheet: | 2SK2993(TE24L,Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-220SM |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The 2SK2993(TE24L,Q) is a metallic oxide semiconductor field effect transistor (MOSFET) that is categorized as single-packaged gate. It is made of a silicon material and is designed to offer high forward current conduction capability and low on-state resistance. This is beneficial in an array of applications since it will allow for a higher voltage junction compared to similar devices that are available.
This device is designed to be used in different applications such as digital switching and motor control systems. It can also be used in amplifiers, power converters, and interface circuits due to its high DC gain and fast switching speed. It can be used to provide power to an electrical device, as well as switch it on or off.
The 2SK2993(TE24L,Q) can operate in three different modes. These are the depletion mode, enhancement mode and linear region mode. The depletion mode is when the transistor is turned on, allowing current to flow through it. In the enhancement mode, the transistor is off, so no current flows through it. Lastly, in the linear region mode, the voltage on the gate will determine the amount of current flowing through the transistor.
The working principle of the 2SK2993(TE24L,Q) is based on the MOSFETs field-effect characteristics. The operation of the device is based on the application of a voltage at the gate, while current is passed through the source and drain terminals. The conductivity of the channel as well as its resistance depends on the voltage applied to the gate, so it can be controlled. In order to reduce power consumption, the voltage should be adjusted appropriately to regulate the current flow.
The device also has reverse-recovery characteristics. It ensures that there will be minimal energy losses during the switching process. The device has low drain-source on-resistance, so it can be used for power conversion and control applications. It also has a low input capacitance for faster switching operations.
Overall, the 2SK2993(TE24L,Q) is well-suited for different applications due to its low on-state resistance, fast switching speed, low power consumption and reverse-recovery characteristics. It is a simple and reliable component for low-power operations. As a result, it can be used in a wide array of applications, from digital switching to motor control to audio amplifiers and interface circuits.
The specific data is subject to PDF, and the above content is for reference
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