2SK2993(TE24L,Q) Allicdata Electronics
Allicdata Part #:

2SK2993(TE24L,Q)-ND

Manufacturer Part#:

2SK2993(TE24L,Q)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 250V 20A TO220SM
More Detail: N-Channel 250V 20A (Ta) 100W (Tc) Surface Mount TO...
DataSheet: 2SK2993(TE24L,Q) datasheet2SK2993(TE24L,Q) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
FET Feature: --
Power Dissipation (Max): 100W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-220SM
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The 2SK2993(TE24L,Q) is a metallic oxide semiconductor field effect transistor (MOSFET) that is categorized as single-packaged gate. It is made of a silicon material and is designed to offer high forward current conduction capability and low on-state resistance. This is beneficial in an array of applications since it will allow for a higher voltage junction compared to similar devices that are available.

This device is designed to be used in different applications such as digital switching and motor control systems. It can also be used in amplifiers, power converters, and interface circuits due to its high DC gain and fast switching speed. It can be used to provide power to an electrical device, as well as switch it on or off.

The 2SK2993(TE24L,Q) can operate in three different modes. These are the depletion mode, enhancement mode and linear region mode. The depletion mode is when the transistor is turned on, allowing current to flow through it. In the enhancement mode, the transistor is off, so no current flows through it. Lastly, in the linear region mode, the voltage on the gate will determine the amount of current flowing through the transistor.

The working principle of the 2SK2993(TE24L,Q) is based on the MOSFETs field-effect characteristics. The operation of the device is based on the application of a voltage at the gate, while current is passed through the source and drain terminals. The conductivity of the channel as well as its resistance depends on the voltage applied to the gate, so it can be controlled. In order to reduce power consumption, the voltage should be adjusted appropriately to regulate the current flow.

The device also has reverse-recovery characteristics. It ensures that there will be minimal energy losses during the switching process. The device has low drain-source on-resistance, so it can be used for power conversion and control applications. It also has a low input capacitance for faster switching operations.

Overall, the 2SK2993(TE24L,Q) is well-suited for different applications due to its low on-state resistance, fast switching speed, low power consumption and reverse-recovery characteristics. It is a simple and reliable component for low-power operations. As a result, it can be used in a wide array of applications, from digital switching to motor control to audio amplifiers and interface circuits.

The specific data is subject to PDF, and the above content is for reference

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