Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	TO-243AA
Supplier Device Package:	MPT3
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	200pF @ 10V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	380 mOhm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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2SK2463T100 Application Field and Working Principle

Introduction

2SK2463T100 is a N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that used in many power amplification applications. It is designed as a high-end power MOSFET with low on-state resistance, high current capability and high-frequency power gain.

Application Field

2SK2463T100 is widely used in various application fields, such as industrial, consumer, automotive and aerospace market.In industrial application, 2SK2463T100 is used as a power amplifier for ac/dc motor control, PWM (Pulse Width Modulation) motor speed control and resonant inverter.In consumer application, it is used in computer power supply and consumer equipment power amplifier, such as UPS systems and power circuits.In automotive application, it is featured as an excellent solution in the application of power MOSFETs, used in cooling fan motors and control systems, as well as in exhaust gas temperature control and running stability of gasoline engines.In aerospace application, it is used in high power/high voltage applications with low EMI (Electro Magnetic Interference).

Working Principle

A MOSFET is commonly used for amplifying or switching electrical signals. It can be considered as a voltage-controlled switch which is electrically operated by the control gate terminal. It is made of metal oxide and semiconductor material, and it operates by varying the width of a channel through which the majority carriers (electrons or holes) are allowed to flow between the source and the drain.When the control gate is at a positive voltage comparing to the source, a channel is formed between the source and the drain. The majority carriers can move from source to drain and establish a conducting channel through the MOSFET. This allows current from drain to source, making it favorable than other FETs in terms of current control, and that is why it is used in high power applications.

Conclusion

In conclusion,2SK2463T100 MOSFET is a very efficient, reliable and cost-effective solution due to its low on-state resistance, high current capability and high-frequency power gain.It is widely used in various application fields, such as industrial, consumer, automotive and aerospace market.It operates with varying the width of a channel and it allows current from drain to source with a positive voltage comparing to the source.

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