Allicdata Part #: | 2SK3372GULTR-ND |
Manufacturer Part#: |
2SK3372GUL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | JFET N-CH 2MA 100MW SSSMINI-3 |
More Detail: | JFET N-Channel 2mA 100mW Surface Mount SSSMini3-F... |
DataSheet: | 2SK3372GUL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 20V |
Current - Drain (Idss) @ Vds (Vgs=0): | 107µA @ 2V |
Current Drain (Id) - Max: | 2mA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 100mW |
Operating Temperature: | -20°C ~ 80°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SSSMini3-F2 |
Base Part Number: | 2SK3372 |
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The 2SK3372GUL is a Junction Field Effect Transistor (JFET). It is a small, low power field effect transistor that controls current by applying varying voltage to its gate terminal. The 2SK3372GUL is an N-channel JFET and is used in many applications in which a low power device with a low ON resistance is desired.
A JFET is a three-terminal semiconductor device that operates on the principle of field effect . The operation of the JFET is based on the fact that a voltage applied to its gate electrode will cause a change in current flowing through the channel. This effect is known as the "field effect". In a JFET, current flows between the Drain (D) and the Source (S) terminals, with the third terminal (called the Gate (G)) used to control the current flow.
The 2SK3372GUL has a Drain-Source voltage of -20V, a drain-source RDS (on) of 0.08 Ω and an operating junction temperature of -55 °C to +150 °C. It is suitable for digital and power circuit applications, such as switching, audio amplifiers and power supply circuits. The device can also be used in analog applications, such as temperature control systems and automatic gain control amplifiers. It can also be used for linear control and level detection.
The 2SK3372GUL has a low gate input capacitance and a low drain-source on resistance. This makes it suitable for high frequency applications such as switch-mode power supplies, switching noise filters and power amplifiers. The small size and low power consumption make it an ideal choice for portable devices such as cellular phones and PDAs.
The 2SK3372GUL is built using a planar process. This type of process is used to create a thin either source or drain layer in the device. This layer is then thinned to reduce its size and weight, and make it more efficient. It also reduces the gate resistance, which improves its switching speed and reduces its power consumption. The planar process also improves the device\'s thermal management, which makes it more reliable and suitable for higher temperature operation.
In conclusion, the 2SK3372GUL is an N-channel JFET that is suitable for a wide range of applications such as digital/power circuits, analog circuits and switching devices. It has a low RDS (on) and gate input capacitance, which make it ideal for high frequency applications. The planar process used to manufacture the device is efficient and reliable, making it suitable for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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2SK3817-DL-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 60A SMP-F... |
2SK3820-DL-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 26A SMP-... |
2SK3821-DL-E | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 40A SMP-... |
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