2SK3003

The 2SK3003 is an enhancement mode N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Toshiba Corp. It is mainly used in power management applications or as a load switch. The 2SK3003 is tailored for the load switch applications by having a body diode with a low forward voltage drop. This MOSFET is available in an industry standard SOD-123 package.

Application field

The 2SK3003 is an ideal choice for many topologies including synchronous buck converters, synchronous boost/buck converters, switched capacitor circuits, active OR-ing and multi-rail converters. It is also used in general high side and low side switch applications. The device can be used in a wide variety of power management designs.

Working principle

The working principle of a MOSFET is based on the difference between the gate-source and drain-source voltages. The gate-source voltage (VGS) is the voltage between the gate and source terminals. The drain-source voltage (VDS) is the voltage between the drain and source terminals. When the VGS is greater than the VDS, the MOSFET is “on”, otherwise it is “off”. To turn the MOSFET “on”, the gate voltage needs to be higher than the source voltage by at least the threshold voltage, Vt.

The 2SK3003 is an enhancement mode MOSFET and as such requires a gate voltage higher than the source voltage to be turned “on”. The gate voltage needs to be at least 2 volts for this device and the maximum gate-source voltage should not exceed the absolute maximum rating of 10 volts. When the gate voltage is applied, a transistor channel is created, enabling electrons to flow freely between the drain and source terminals. This enables current to flow between the terminals, thus controlling the output voltage.

When the gate voltage is removed, the channel is destroyed shutting off the current flow and no voltage is present between the drain and source terminal. This is known as the off-state and the device is considered to be off until the gate voltage is reapplied.

Secondly, the maximum drain-source voltage (VDS) should not exceed a certain maximum value to prevent the MOSFET from being damaged. This is known as the maximum drain current limit or the “current rating” of the MOSFET. The 2SK3003 has a maximum drain current rating of 2.0A.

Finally, the device also has a maximum permissible drain-source “on” resistance rating, which is the maximum voltage drop across the device when it is in the “on-state”. The lower this “on” resistance, the lower the power loss due to the voltage drop across the device. The 2SK3003 has a maximum “on” drain-source resistance of 2.2Ω.

Conclusion

The 2SK3003 is a useful power MOSFET from Toshiba Corp. It is mainly used in power management and load switch applications. Its working principle is based on the difference between the gate-source and drain-source voltages, with the gate voltage being higher than the source voltage by at least the threshold voltage for it to be “on”. This MOSFET also has a maximum drain current limit and a maximum permissible “on” resistance that should not be exceeded in order to ensure proper device operation.