Allicdata Part #: | 2SK3796-3-TL-EOSTR-ND |
Manufacturer Part#: |
2SK3796-3-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 10MA 100MW SMCP |
More Detail: | JFET N-Channel 10mA 100mW Surface Mount SMCP |
DataSheet: | 2SK3796-3-TL-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1.2mA @ 10V |
Current Drain (Id) - Max: | 10mA |
Voltage - Cutoff (VGS off) @ Id: | 180mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 4pF @ 10V |
Resistance - RDS(On): | 200 Ohms |
Power - Max: | 100mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SMCP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
2SK3796-3-TL-E Application Field and Working Principle
The 2SK3796-3-TL-E is classified as a transistor-JFET, which stands for junction field effect transistor. This type of transistor is used to control current flow with the aid of an electric field. It is often used in electrical circuits, as it has excellent high input resistance and low current drain.
In 2SK3796-3-TL-E Transistors, the junction between the drain and the source helps to control the voltage passing through the device. The applied voltage, or the gate voltage, produces an electric field inside the transistor which changes the resistance between the drain and the source. By changing the resistance in this manner, the flow of current through the device is regulated.
The 2SK3796-3-TL-E Transistors are commonly used in applications such as analog switches, high-speed and low-noise amplifiers, digital logic gates, and power electronics. They can be used for switching large currents and for driving high power transistors. In addition, they have good linearity and high gain.
The 2SK3796-3-TL-E Transistors have a four-terminal construction. The four terminals are gate, drain, source and substrate, and they are used in the following manner: The source and the drain are connected together with low resistance to regulate the current flow, while the gate terminal can be left unconnected or externally driven with a voltage source. The substrate is usually connected to the ground and helps to maintain the functioning of the transistor.
The 2SK3796-3-TL-E Transistors are also known to have very low power dissipation and can be used in low-power applications. They are, however, susceptible to thermal runaway, which is why they must be tightly regulated. This is done by using a thermal gradient circuit, which monitors the temperature of the transistor and makes sure that it doesn’t exceed the safe levels.
The 2SK3796-3-TL-E Transistors are widely used for switching applications, because of their low cost and their high input impedance. They are a great alternative to more expensive devices such as MOSFETs, although they are not suited for high-precision applications. They are capable of providing very fast switching and are generally employed in digital logic, integrated circuits and sensor applications.
In conclusion, the 2SK3796-3-TL-E Transistors is a widely used transistor in the field of electronic engineering. It is a junction field effect transistor, with excellent high input resistance and low current drain. It is used in applications such as analog switches, high-speed and low-noise amplifiers, digital logic gates, and power electronics. It offers a four-terminal construction with gate, drain, source and substrate terminals, and is renowned for its low power dissipation and fast switching speeds. However, it is susceptible to thermal runaway, which is why a thermal gradient circuit should be used to keep the transistor within safe temperature levels.
The specific data is subject to PDF, and the above content is for reference
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