2SK326800L Allicdata Electronics
Allicdata Part #:

2SK326800LTR-ND

Manufacturer Part#:

2SK326800L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET N-CH 100V 15A UG-2
More Detail: N-Channel 100V 15A (Tc) 1W (Ta), 20W (Tc) Surface ...
DataSheet: 2SK326800L datasheet2SK326800L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: U-DL
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The 2SK326800L is a single field-effect transistor (FET) specifically designed for low frequency and low-noise switch and amplifier applications. This device uses advanced technology to achieve extremely low current drain, high output current, and low on-state resistance. It is suitable for applications in switch mode power supplies, amplifier circuits and motor speed controlling circuits.

The 2SK326800L is a JFET-type device, meaning it uses a gate terminal to control the current flow between the source and drain terminals. This type of transistor relies on the voltage difference between the gate-to-source terminal and the source-to-drain terminal (Vgs and Vds, respectively) in order to regulate the current flow. A positive voltage applied to the gate further increases the electric field strength, which in turn raises the cutoff frequency and makes the channel’s transconductance higher. A negative voltage applied to the gate, meanwhile, will decrease the cutoff frequency and decrease the channel’s transconductance.

The typical value of the maximum drain current is up to 10mA, with an on-state resistance of 350 mΩ. The breakdown voltage of the 2SK326800L is around 20V, while the threshold voltage is 0.5V. In terms of noise, this FET has a minimum noise voltage of -106dB, which makes it suitable for low-noise audio applications. In addition, its frequency range is from 10kHz to 30MHz and its maximum power dissipation is 0.3W.

The 2SK326800L is most commonly used as a switch in switching mode power supplies. Its low Vgs threshold and low on-state resistance make it an ideal device for controlling the current in such circuits. It can also be used in amplifier circuits where noise reduction is a priority. The high current carrying capability of the FET makes it well-suited for driving larger parts of the amplifier while minimizing noise. Finally, the 2SK326800L is also an effective choice for controlling the speed of motors since it has a wide circuit frequency response range.

In summary, the 2SK326800L is a single FET specifically designed for low frequency and low-noise switch and amplifier applications. It utilizes a gate terminal to control the current flow between the source and drain terminals, and it is characterized by a low Vgs threshold, low on-state resistance, and a wide circuit frequency response range. This FET is typically used as a switch in switching mode power supplies, as an amplifier in noise reduction applications, and in motor speed controlling circuits.

The specific data is subject to PDF, and the above content is for reference

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