2SK3817-DL-E Allicdata Electronics
Allicdata Part #:

2SK3817-DL-E-ND

Manufacturer Part#:

2SK3817-DL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 60A SMP-FD
More Detail: N-Channel 60V 60A (Ta) 1.65W (Ta), 65W (Tc) Surfac...
DataSheet: 2SK3817-DL-E datasheet2SK3817-DL-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SMP-FD
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The 2SK3817-DL-E, a single MOSFET transistor, is an essential component used in many different devices. It is particularly well-suited for applications such as DC-DC converters, inverters, and other power management solutions. This component is widely used in integrated circuits and other digital devices.

The 2SK3817-DL-E is a shallow trench insulated gate field effect transistor that uses a lateral-quality substrate. Its operating temperature range is -55 to 150C, and it has a maximum drain current of 2 A. This component has a low input capacitance which helps reduce power usage when operating. This makes it well-suited for use in systems where power efficiency is of paramount importance. Additionally, the high gain and low-power characteristics of this component make it suitable for use in a variety of applications.

The working principle of a MOSFET is based on the idea that the MOSFET behaves like an open switch. When voltage is applied to the drain terminal, a current flows between the source and the drain terminals. The source and drain terminals act as an open-loop circuit; thus, the current flow is dependent on the voltage applied to the gate. When the voltage applied to the gate is increased, the current flow between the source and the drain increases as well. Conversely, if the voltage applied to the gate is decreased, the current flow between the source and drain will decrease.

The 2SK3817-DL-E is used in many applications, including DC-DC converters, power supplies, and inverters. As mentioned earlier, the low input capacitance of this component is ideal for applications where power usage needs to be minimized. Additionally, the high gain and low-power characteristics make it well-suited for use in a variety of applications. Furthermore, this component also has a lower gate threshold voltage than other MOSFETs, making it suitable for use in circuits that require a high switching speed.

In summary, the 2SK3817-DL-E is a single MOSFET transistor that is well-suited for many applications. Its low input capacitance makes it ideal for applications where power usage needs to be minimized. Additionally, the high gain and low-power characteristics make it suitable for use in a variety of applications. The working principle of this component is based on the idea that it acts like an open-loop circuit; thus, the current flow is dependent on the voltage applied to the gate.

The specific data is subject to PDF, and the above content is for reference

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