2SK354700L Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.5V @ 1µA
Package / Case:	SOT-723
Supplier Device Package:	SSSMini3-F1
Mounting Type:	Surface Mount
Operating Temperature:	125°C (TJ)
Power Dissipation (Max):	100mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	12pF @ 3V
Vgs (Max):	±7V
Series:	--
Rds On (Max) @ Id, Vgs:	12 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Current - Continuous Drain (Id) @ 25°C:	100mA (Ta)
Drain to Source Voltage (Vdss):	50V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The 2SK354700L is a type of transistor known as a Field Effect Transistor (FET) or MOSFET (Metal Oxide Semiconductor FET). These transistors are used in digital and switching circuits, and are particularly useful in power electronics. Field Effect Transistors (FETs) were one of the earliest types of transistors created. All FETs are composed of three parts: a source, a drain, and a gate. These components are separated from each other by thin insulating layers of oxide, allowing for the full control of the current passing through the channel. The main function of the FET is to control the current flowing through the channel.The 2SK354700L is a MOSFET Single packaged device (S-MOSFET), and it can be used for either N-Channel or P-Channel types. This type of device is used in a variety of applications, from consumer electronics to industrial and automotive. Typically, mosfet transistors are used in applications where fast switching is necessary, and they are particularly useful in power management; they can be used to switch high voltages and currents without the need for a power supply.The 2SK354700L has a maximum drain current of 200A, and a drain-source voltage of 700V, making it ideal for power management applications. The operating temperature of the device is between -3V and +85V, and it is suitable for a range of supply voltages.When it comes to working principle, there are two important concepts to understand: the threshold voltage and the device capacitance. The threshold voltage is the gate-source voltage that is necessary for the device to operate. It must be higher than the threshold voltage for the FET to be turned on, and lower for it to be turned off. The device capacitance is the capacitance between the drain and the gate, which affects the resistance of the FET.At the heart of the working principle of the 2SK354700L is the channel resistance. This is the resistance of the conductor that current passes through when the device is turned on. Usually, the channel resistance of FETs is much lower than that of BJTs due to the insulating layers of oxide. This reduced resistance allows for the current to pass through the device more quickly and efficiently.The working principle of the 2SK354700L is to allow the current through the channel when the gate voltage is greater than the threshold voltage. When the gate voltage is less than the threshold voltage, the channel resistance increases, and the current is blocked. This makes the device highly efficient in power management applications, as it can quickly switch on and off as needed.The 2SK354700L is a versatile device that can be used for a variety of applications. From consumer electronics to industrial and automotive applications, this type of FET is a reliable and effective solution for managing power. As it can switch high voltages and currents quickly, it is an excellent choice for power management. In addition, its low channel resistance makes it ideal for applications that require a low amount of power dissipation.

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