2SK302200L Allicdata Electronics

2SK302200L Discrete Semiconductor Products

Allicdata Part #:

2SK302200LTR-ND

Manufacturer Part#:

2SK302200L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET N-CH 60V 5A UG-2
More Detail: N-Channel 60V 5A (Tc) 1W (Ta), 10W (Tc) Surface Mo...
DataSheet: 2SK302200L datasheet2SK302200L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: U-G2
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 10W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A 2SK30A is a type of MOSFET (metal-oxide-semiconductor field-effect-transistor) that is single-structured and chiefly used for its relatively higher current, power, and input and output control. The 2SK30A features quick switching and higher drive currents, allowing it to be used for power supply and voltage regulator applications. It is particularly well-suited for high-speed, high-density and multi-channel / multi-functional applications like switching regulators and DC-DC converters.

The 2SK30A is also used in radio frequency (RF) applications, by amplifying and controlling an RF signal. In terms of design, these MOSFETs are built with an insulated gate electrode, which is then designed with the proper voltage and power capability to suit the application. To take full advantage of this MOSFET, it is important to incorporate the proper gate voltage and threshold voltage levels.

In terms of application fields, the 2SK30A can be used in stationary or mobile devices. It is often used as a gate drive source in mobile phones or wireless devices, or as an amplifier or switch in wireless infrastructure applications. It can also be used for automotive applications such as engine ignition, alternator control, and voltage regulation.

When working with the 2SK30A, it is essential to have an understanding of its basic principle: the construction of the MOSFET determines how it operates. It consists of a single insulated gate, surrounded by four terminals. The gate acts as a control element, allowing the voltage on the impedance-matched gate to control the impedance-matched drain. The voltage on the gate controls the current on the drain, and current flows in the channel between the source and the drain. In order for the MOSFET to work properly, the source to source voltage must be greater than the gate-source voltage, and the drain-source voltage must be greater than the gate-source voltage.

The 2SK30A MOSFET is an ideal choice for many applications because its greater current capability and faster switching time increase the system efficiency and power output. The 2SK30A is also readily available and more cost-effective than other MOSFET devices available for the same applications. Its increased power capability and lower on-resistance makes it a reliable and efficient choice for myriad applications.

The specific data is subject to PDF, and the above content is for reference

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