2SK3018-TP Allicdata Electronics

2SK3018-TP Discrete Semiconductor Products

Allicdata Part #:

2SK3018-TPMSTR-ND

Manufacturer Part#:

2SK3018-TP

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: N-CHANNEL MOSFET, SOT-323 PACKAG
More Detail: N-Channel 30V 100mA (Ta) 200mW (Ta) Surface Mount ...
DataSheet: 2SK3018-TP datasheet2SK3018-TP Datasheet/PDF
Quantity: 6000
3000 +: $ 0.04166
Stock 6000Can Ship Immediately
$ 0.05
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Power Dissipation (Max): 200mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The 2SK3018-TP is a field-effect transistor (FET) that was designed to operate in the high power semiconductor market. It is a single MOSFET, and boasts a wide variety of applications. Currently, this semiconductor is widely-recognized for being an excellent choice for use in switching and power applications, as well as in AC/DC converters.

The 2SK3018-TP is based on a combination of the latest advances in MOSFET and transistor technology. It is a general-purpose device that has been specifically designed for use in a variety of high-power applications. The device is rated for peak currents of up to 9 A, and is capable of dissipating up to 150 W of power without overheating or incurring any additional risk. The device also features an integrated temperature monitor, which helps protect it from damage caused by overheating.

The 2SK3018-TP utilizes a number of features that help improve performance and reliability. One such feature is the advanced low-voltage gate drive, which helps to minimize switching losses and improve efficiency. The device also features a breakdown voltage of up to 600 V, which provides additional protection in high-voltage applications. Additionally, the device features excellent on-resistance, which helps to reduce conduction losses and increase overall efficiency.

The working principle behind the 2SK3018-TP is based on the fact that it is a MOSFET. Essentially, this device consists of two separate components: the Drain and the Source. When a voltage is applied to the device, the electrons in the Source are attracted to the Drain, creating a flow of current. This current flow can then be used to control various electronic components, such as relays and motors.

The 2SK3018-TP has a wide range of uses in the high-power semiconductor market. It is an excellent choice for use in a variety of applications, including those related to switching, power electronics, and AC/DC conversion. Moreover, the device\'s advanced features and superior on-resistance make it a favorite among power electronics engineers and system designers. By utilizing the device, engineers and designers can reduce conduction losses and increase efficiency, helping to maximize their products\' performance.

The specific data is subject to PDF, and the above content is for reference

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