| Allicdata Part #: | 2SK3481-AZ-ND |
| Manufacturer Part#: |
2SK3481-AZ |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 100V MP-25/TO-220 |
| More Detail: | N-Channel 100V 30A (Tc) 1.5W (Ta), 56W (Tc) Throug... |
| DataSheet: |  2SK3481-AZ Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta), 56W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Bulk |
Description
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2SK3481-AZ is a type of Field Effect Transistor (FET) that is commonly used in many electronic devices. The FET is a three-terminal device, with a drain, source, and gate. It is a unipolar device, meaning that a voltage applied only to the gate results in current flowing between the source and drain. This current is controlled by the voltage applied to the gate, making the FET an excellent choice for signal processing applications. The 2SK3481-AZ is a single-mode FET with a maximum drain-source breakdown voltage of 100V, a maximum gate-source voltage of 30V, and a brief pulse duration of up to 100μs. It is a N-channel silicon device with a drain current rating of 8A at 25° C and a low on-resistance of 41 mΩ. The 2SK3481-AZ is used in a wide range of applications, such as switch-mode power supplies, motor controller drivers, lighting circuits and HVAC control systems. It is also used as an active sensor for temperature, pressure, and displacement measurements. The working principle of 2SK3481-AZ involves applying a voltage to the gate, which sets up an electric field between the gate and the source. When this voltage is increased, more electrons are attracted to the gate, reducing the resistance between the drain and source. This current flow is controlled by the voltage that is applied to the gate, leading to a low power consumption compared to a traditional bipolar transistor. As the gate voltage increases, the drain current also increases, resulting in an exponential relationship between the two. The output of the FET is the drain current, which can be used to control the voltage applied to the load. By adjusting the applied gate voltage, it is possible to control the power delivered to the load, making the 2SK3481-AZ a versatile and reliable choice for many switching and power control applications.The FET also offers a low on-resistance of 41 mΩ, which helps reduce switching losses, meaning that more energy can be delivered to the load. The FET also has a low input capacitance, making it an ideal choice for high frequency applications such as switch-mode power supplies. Overall, the 2SK3481-AZ is a versatile and reliableField Effect Transistor that is used in many applications. It has a low on-resistance and capacitance, as well as a high drain current rating, making it ideal for both switched and power control applications.
The specific data is subject to PDF, and the above content is for reference
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