Allicdata Part #: | 2SK3430-Z-E1-AZ-ND |
Manufacturer Part#: |
2SK3430-Z-E1-AZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 40V 80A TO220AB |
More Detail: | N-Channel 40V 80A (Tc) 1.5W (Ta), 84W (Tc) Through... |
DataSheet: | 2SK3430-Z-E1-AZ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 84W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.3 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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The 2SK3430-Z-E1-AZ belongs to a family of single-polycrystalline MOSFET transistor. It is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) that is used for power switching applications. It is equipped with a high-power switching improvement, achieving high efficiency in a wider operating range. Due to its high efficiency, wide operating range, high power handling capacity and excellent switching capabilities, the 2SK3430-Z-E1-AZ is being used in more demanding applications such as renewable energy power control systems, power conditioning and motor control applications, as well as industrial and commercial applications such as appliances and and other electrical/electronic product design.
The 2SK3430-Z-E1-AZ utilizes a special type of MOSFET structure, known as a dual-channel MOSFET, which is comprised of two separate charge carriers in the same active region. The main advantage of this design is that it enhances the power handling capacity of the device and reduces power consumption. This improved power handling and lower power consumption are due to the device’s two separate charge carriers, which interact to provide a stronger device-to-gate current flow. The dual-channel MOSFET structure also increases the gate speed and switching speed of the device, providing excellent performance in high-frequency applications.
The 2SK3430-Z-E1-AZ provides excellent power control and excellent power conversion efficiency. The device is able to operate between a wide range of voltages (0.7V to 10V), providing efficient and reliable power control even in adverse environmental conditions, such as high altitude, high temperature, and variable sources of power. Due to its wide voltage range, the device is also suited for a variety of operating voltages and applications.
The basic principle behind the working of the 2SK3430-Z-E1-AZ is charge transfer. When a certain level of voltage is applied to the gate, positive and negative charges are transferred from the source region to the drain region of the device. This forms a conducting channel between the source and the drain, allowing a higher current flow. As the gate voltage is further increased, this conducting channel becomes more efficient, allowing more current to flow without causing excessive power dissipation.
The 2SK3430-Z-E1-AZ is ideal for use in a wide range of applications due to its high-efficiency and low power consumption. As mentioned earlier, the device is being used in more demanding applications such as solar energy power control systems, power conditioning and motor control applications. It is also used in industrial and commercial applications such as appliances, industrial automation systems and other electrical/electronic product design. Furthermore, due to its superior power handling capabilities, it is being used in communication, automotive and aerospace applications.
In conclusion, the 2SK3430-Z-E1-AZ is a unique single-polycrystalline MOSFET transistor. It combines a high-power switching improvement and a wide operating range with excellent power conversion efficiency, making it suitable for use in a wide variety of applications. It utilizes a dual-channel MOSFET structure, which enhances the power handling capacity, reduces power consumption and improves switching speed. The device is able to operate between a wide range of voltages with excellent performance in high-frequency applications. As such, it is being increasingly used in demanding applications such as renewable energy power control systems, power conditioning and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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