Allicdata Part #: | 2SK3811-ZP-E1-AYTR-ND |
Manufacturer Part#: |
2SK3811-ZP-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 40V MP-25ZP/TO-263 |
More Detail: | N-Channel 40V 110A (Tc) 1.5W (Ta), 213W (Tc) Surfa... |
DataSheet: | 2SK3811-ZP-E1-AY Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 213W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 17700pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 55A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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2SK3811-ZP-E1-AY is known as a single MOSFET (metal-oxide-semiconductor field-effect transistor). A MOSFET is a three-terminal device that acts as an electrical switch. It functions either as an amplifier or as a switch. The device is used to control the current flow in a circuit.
The 2SK3811-ZP-E1-AY is a N-channel, enhancement-mode MOSFET. It is designed for ATX power supplies and other related power management applications. The device is manufactured using advanced process technology that enables low-cost production and reliable operation. It is available in a range of package sizes, including DPAK, TO-220, and TO-252. The device is capable of handling high currents up to 18.5 A and is RoHS compliant.
The 2SK3811-ZP-E1-AY MOSFET device can be used in a variety of applications including DC-DC converters, automotive electronics, and low-power, low-voltage circuits. It can be used as an amplifier, switch, or level shifter. The device features high voltage rating up to 500 V, low on-resistance of 0.5 Ω, and low threshold voltage of 1.4 V. It also features low gate charge for high-speed switching, fast switching speed, and low power dissipation.
The 2SK3811-ZP-E1-AY MOSFET device operates based on the principle of electro-static control of a channel between its source and drain terminals. It uses electric fields to control the current flow through the channel of the device. This type of MOSFET is known as an enhancement-mode MOSFET. When the gate-to-source voltage is increased, this increases the electric field. This in turn will expand the channel, allowing more current to flow between the source and drain terminals.
The 2SK3811-ZP-E1-AY MOSFET device is designed to be used in a wide range of power-handling applications. It is a low-cost, high-performance, and efficient component that is suitable for high-current and high-frequency switching applications. The device is available in a variety of package sizes, enabling designers to optimize solutions for their specific needs. The device is RoHS compliant, making it a safe choice for use in consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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