2SK3906(Q) Allicdata Electronics
Allicdata Part #:

2SK3906(Q)-ND

Manufacturer Part#:

2SK3906(Q)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 600V 20A TO-3PN
More Detail: N-Channel 600V 20A (Ta) 150W (Tc) Through Hole TO-...
DataSheet: 2SK3906(Q) datasheet2SK3906(Q) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SK3906(Q) transistor is a single P-channel depletion mode MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) which is able to perform numerous low and high power applications. Through the use of its strong and powerful output, it is able to operate as a switch for different circuits, as well as amplifying and changing the characteristics of electrical signals.

The 2SK3906(Q) is a junction type transistor, and it has a variety of characteristics due to its special construction. This MOSFET operates under depletion mode and features a dielectric between the gate and the source, which has a very high dielectric constant. This helps to prevent leakage of current, and thus helps to regulate the flow and amount of current through the device.

The basic structure of the 2SK3906(Q) includes four terminals, namely the drain, gate, source, and body. The gate and body terminals are connected to the output and input of the device respectively. The drain and source terminals are connected through a channel, which acts as a conducting path between them. The drain and source terminals are also connected to a source circuit, which is responsible for providing the necessary current to the device.

The fundamental operating principle of the 2SK3906(Q) is that it is controlled by voltage on the gate terminal. When a voltage is supplied to the gate signal, it produces an electrostatic field between the source and the gate. This electrostatic field affects the movement of the majority carriers (electrons) of the source and drain terminal, which helps the device to conduct current and to produce an output signal.

The 2SK3906(Q) can be used for many applications, including logic circuits, signal amplification, power supply switching, power supply filtering, motor control, and much more. It is perfect for low voltage applications because it is able to be maintained in an off state at low gate-source voltages and low temperatures. It is commonly used in low power and portable applications, such as in mobile devices and other consumer products which require power-saving.

In addition, the 2SK3906(Q) is also used for higher power applications. These include LED lighting, LED displays, H-Bridge circuits, DC motor control, and more. It is an excellent choice for industrial applications where high power control and low heat dissipation are required. It also has excellent frequency characteristics due to its small package size and its low capacitance, making it suitable for high frequency applications.

The 2SK3906(Q) is an excellent choice for many low and high power applications. Its single P-channel depletion mode MOSFET structure and high dielectric constant make it an ideal component for regulating the flow and amount of current in a variety of circuits and devices. Its low power and portable design also make it suitable for a wide range of uses, ranging from consumer products to industrial applications. Furthermore, its excellent frequency characteristics make it a perfect choice for high frequency applications. With its versatility and wide range of applications, the 2SK3906(Q) is a great component to have in any circuit.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "2SK3" Included word is 40
Part Number Manufacturer Price Quantity Description
2SK3539G0L Panasonic El... 0.0 $ 1000 MOSFET N-CH 50V .1A S-MIN...
2SK3546G0L Panasonic El... 0.0 $ 1000 MOSFET N-CH 50V .1A SS-MI...
2SK3547G0L Panasonic El... -- 1000 MOSFET N-CH 50V .1A SSS-M...
2SK3309(Q) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 450V 10A TO22...
2SK3309(TE24L,Q) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 450V 10A TO22...
2SK3128(Q) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 30V 60A TO-3P...
2SK3313(Q) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 500V 12A TO22...
2SK3342(TE16L1,NQ) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 250V 4.5A PW-...
2SK3388(TE24L,Q) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 250V 20A SC-9...
2SK3403(Q) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 450V 13A TO22...
2SK3462(TE16L1,NQ) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 250V 3A PW-MO...
2SK3466(TE24L,Q) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 500V 5A SC-97...
2SK3662(F) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 60V 35A TO220...
2SK3844(Q) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 60V 45A TO220...
2SK3868(Q,M) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 500V 5A TO220...
2SK3906(Q) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 600V 20A TO-3...
2SK3703-1E ON Semicondu... -- 535 MOSFET N-CH 60V 30AN-Chan...
2SK3707-1E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 20AN-Cha...
2SK3816-DL-1E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 40AN-Chan...
2SK3820-DL-1E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 26AN-Cha...
2SK3430-AZ Renesas Elec... 0.0 $ 1000 MOSFET N-CH 40V 80A TO220...
2SK3430-Z-E1-AZ Renesas Elec... 0.0 $ 1000 MOSFET N-CH 40V 80A TO220...
2SK3431-AZ Renesas Elec... 0.0 $ 1000 MOSFET N-CH 40V 83A TO220...
2SK3431-Z-E1-AZ Renesas Elec... 0.0 $ 1000 MOSFET N-CH 40V 83A TO220...
2SK3816-DL-E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 40A SMP-F...
2SK3817-DL-E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 60A SMP-F...
2SK3820-DL-E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 26A SMP-...
2SK3821-DL-E ON Semicondu... -- 1000 MOSFET N-CH 100V 40A SMP-...
2SK3821-E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 40A SMPN...
2SK3823 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 40A TO220...
2SK3824 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 60A TO-22...
2SK3826 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 26A TO-2...
2SK3827 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 40A TO-2...
2SK3044 Panasonic El... 0.0 $ 1000 MOSFET N-CH 450V 7A TO-22...
2SK3047 Panasonic El... 0.0 $ 1000 MOSFET N-CH 800V 2A TO-22...
2SK3566(STA4,Q,M) Toshiba Semi... 0.0 $ 1000 MOSFET N-CH 900V 2.5A TO-...
2SK3318 Panasonic El... 0.0 $ 1000 MOSFET N-CH 600V 15A TOP-...
2SK302200L Panasonic El... -- 1000 MOSFET N-CH 60V 5A UG-2N-...
2SK353900L Panasonic El... -- 1000 MOSFET N-CH 50V .1A S-MIN...
2SK306400L Panasonic El... 0.0 $ 1000 MOSFET N-CH 30V .1A S-MIN...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics