2SK3462(TE16L1,NQ) Allicdata Electronics
Allicdata Part #:

2SK3462(TE16L1,NQ)-ND

Manufacturer Part#:

2SK3462(TE16L1,NQ)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 250V 3A PW-MOLD
More Detail: N-Channel 250V 3A (Ta) 20W (Tc) Surface Mount PW-M...
DataSheet: 2SK3462(TE16L1,NQ) datasheet2SK3462(TE16L1,NQ) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 267pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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2SK3462 (TE16L1, NQ) is a MOSFET that belongs to the transistor family and is designed for a wide range of applications. It is made out of an N channel silicon MOSFET and is able to handle 100 volts peak of drain-source voltage. It has a rated drain current of 1.6 A and a drain-source/gate-source breakdown voltage of 60 volts.

In terms of its applications, 2SK3462 (TE16L1, NQ) can be used in a variety of ways. For example, it can be utilized as a power transistor in applications like motor control, appliance circuits, and power converters. Additionally, it is highly suited for switching circuits and audio amplifiers as well. Furthermore, it can be used as a digital logic gate as it is compatible with logic levels in most computers.

Regarding its working principle, 2SK3462 (TE16L1, NQ) leverages a single gate structure in order to create a voltage-controlled field-effect transistor. To put it more simply, this transistor has an insulated gate field which is able to create a varying electric field on its substrate. This electric field can then be used to regulate the conductivity of the device’s drain-source. The gate of this transistor uses a reverse bias–also known as a negative voltage–to create a depletion region–which is also called a depletion layer–within the transistor. This region is made up of electrons and holes, which form a reverse-biased P-N junction.

By varying the strength of the device’s gate voltage, it is possible to modulate the conductivity of the device’s drain-source. That is to say, weak gate voltage will reduce the conductivity of the device and strong gate voltage increases the device’s conductivity.

In summary, 2SK3462 (TE16L1, NQ) is a single gate field effect transistor that is suitable for a broad range of applications. It works by creating an electric field on its substrate and varying the strength of the device’s gate voltage to regulate its conductivity. It is highly compatible with logic levels found in computers, making it perfect for digital logic gate applications. It is also great for power transistor applications like motor control, power converters, and appliance circuits. Furthermore, it is an ideal choice for switching circuits and audio amplifiers as well.

The specific data is subject to PDF, and the above content is for reference

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