2SK3484-AZ

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The 2SK3484-AZ is a single N channel MOSFET based on DMOS (Double Diffused MOS) technology. It is used in a variety of applications, including in low noise amplifiers, power line supply circuits, and switching circuits. It has been designed to be easy to use and provide reliable performance.

The 2SK3484-AZ has a drain-source on-resistance of 4.84 ohms and a drain-source voltage of 60V. It has an absolute maximum drain-source voltage of 50V and a maximum drain-source current of 5 A. It also has a maximum power dissipation of 2 W.

The 2SK3484-AZ is designed to have excellent switching characteristics. It has a fast switching speed, high output current, and low on-resistance. The 2SK3484-AZ can provide up to 10 Amps of continuous current and is capable of switching high voltages up to 60V. It also has a low gate threshold voltage, which allows it to be used in low voltage switching applications.

The working principle of the 2SK3484-AZ is based on the MOSFET technology. When a voltage is applied to the gate of the MOSFET, it creates an electric field within the channel. This electric field induces a charge in the channel, which then changes the conductivity of the channel. This change in conductivity enables the flow of electrons from the drain to the source of the MOSFET.

The 2SK3484-AZ is used in a variety of applications including in power line supply circuits, low noise amplifiers, switching circuits, and as a power transistor in audio power amplifiers. It is also used as a driver for large DC motors, as it can handle large currents and voltages. It can also be used in high-speed switching circuits and as a signal amplifier.

The 2SK3484-AZ is a single N channel MOSFET designed for use in a variety of applications. It has excellent switching characteristics and is capable of switching high voltages up to 60V. It is easy to use and provides reliable performance. The working principle is based on the MOSFET technology, where an applied voltage creates an electric field that changes the conductivity of the channel.

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