Allicdata Part #: | 2SK3480-AZ-ND |
Manufacturer Part#: |
2SK3480-AZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 100V MP-25/TO-220 |
More Detail: | N-Channel 100V 50A (Tc) 1.5W (Ta), 84W (Tc) Throug... |
DataSheet: | 2SK3480-AZ Datasheet/PDF |
Quantity: | 1000 |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta), 84W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
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The 2SK3480-AZ is a P-Channel Enhancement mode MOSFET manufactured by Toshiba. It is a field effect transistor (FET) with a single gate. FETs are semiconductor devices that supply electrical current to a circuit, much like a transistor. FETs are commonly used to control the flow of current through a circuit because they offer low resistance, high current gain, and low capacitance.
The 2SK3480-AZ has a maximum drain-source voltage (Vds) of 30V and a maximum drain current (Id) of 3.2A. It also has an on-state resistance (Rds) of 0.090 Ohms when the gate-source voltage (Vgs) is 10V. The maximum power dissipation (Pd) for this particular device is 20W and the maximum junction temperature of the device is 175°C. The 2SK3480-AZ has a typical rise time (tr) of 10ns and a typical fall time (tf) of 10ns, making it suitable for high speed switching applications.
The 2SK3480-AZ is typically used in applications such as switching power supplies, DC/DC converters, power amplifiers, and motor drives. It can also be used in applications that require a low on-state resistance and a high switching speed. The 2SK3480-AZ is a very reliable device and can be used in high temperature and high voltage applications.
Since the 2SK3480-AZ is a FET, it operates differently than a transistor. Unlike a transistor, in which the current flow is controlled by two terminals ( base and collector ), FETs require only one terminal ( the gate ) to control current flow. The gate is used to control the voltage between the source and drain terminals. When the voltage between the source and drain is low, current will flow freely between the source and drain terminals. When the gate voltage is increased, the drain-source voltage (Vds) also increases, which reduces the current flow between the source and drain terminals.
The 2SK3480-AZ has a maximum drain-source voltage of 30V, which means that it can handle high voltage applications. Additionally, it has a high current gain, which makes it suitable for power applications. The device also has a low Rds, which makes it suitable for applications that require low power consumption. Overall, the 2SK3480-AZ is a reliable and efficient device that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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