Allicdata Part #: | 2SK3666-2-TB-EOSTR-ND |
Manufacturer Part#: |
2SK3666-2-TB-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET NCH 30V 200MW 3CP |
More Detail: | JFET N-Channel 10mA 200mW Surface Mount 3-CP |
DataSheet: | 2SK3666-2-TB-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 600µA @ 10V |
Current Drain (Id) - Max: | 10mA |
Voltage - Cutoff (VGS off) @ Id: | 180mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 4pF @ 10V |
Resistance - RDS(On): | 200 Ohms |
Power - Max: | 200mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CP |
Base Part Number: | 2SK3666 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
2SK3666-2-TB-E belongs to the JFETs (Junction Field-Effect Transistors) family. This device, in particular, is a field-effect transistor with an N-channel, which contains two gates with an insulated-gate field-effect structure. It is an unipolar device as it only uses one type of charge carrier, electrons, to carry the current.
The application field of the 2SK3666-2-TB-E is mainly in the audio-frequency range, as they are considered to be more suitable than other types of transistors due to their high-input impedance and low-noise characteristics. They are used in RF amplifiers, oscillators, and other analog circuits. Additionally, they are used as a replacement for conventional bipolar transistors due to their low-power consumption and small size.
The working principle of the 2SK3666-2-TB-E is as follows. When a voltage is applied to the gate, an electric field is created, which in turn changes the conductivity of the channel region between the two gates. This change leads to a modulation of the channel current, thus controlling the voltage between the gate and drain and allowing for the current to be controlled by the applied voltage.
The 2SK3666-2-TB-E is highly reliable, demonstrating stability in both cases of high and low temperatures. Besides, due to its low gate current and low junction capacitance, it is considered to be suitable for AC applications as it does not produce any unwanted noise. Additionally, it features low input capacitance, making it an ideal choice for high-speed switching.
In summary, the 2SK3666-2-TB-E belongs to the JFETs family and is an N-channel field-effect transistor with two gates and an insulated gate field-effect structure. It is mainly used as an audio-frequency device in RF amplifiers, oscillators, and other analog circuits due to its high-input impedance and low-noise characteristics. Furthermore, it is highly reliable and has low-gate current and low-junction capacitance, which makes it suitable for AC applications and high-speed switching.
The specific data is subject to PDF, and the above content is for reference
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