Allicdata Part #: | AO3409L_102-ND |
Manufacturer Part#: |
AO3409L_102 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V SOT23 |
More Detail: | P-Channel 30V 2.6A (Ta) 1.4W (Ta) Surface Mount SO... |
DataSheet: | AO3409L_102 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 2.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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AO3409L_102 Application Field and Working Principle
The AO3409L_102 is a depletion-mode, N-channel MOSFET that is released by Alpha & Omega Semiconductor. This MOSFET has a maximum drain source voltage of 11 V, a drain source on-state resistance of 0.26Ω, and a maximum continuous drain current at 30°C of 650mA. It also features a very low gate-source threshold voltage and can be employed easily in low voltage applications.
Application Field
The AO3409L_102 offers a number of advantages that makes it suitable for a wide range of applications. One of its benefits is its low gate-source threshold voltage, which is only 0.45V. This, coupled with its low RDS(on) of 0.26Ω, makes it a great choice for multiple low voltage applications. Because of this, it can be used in power switches, audio amplifiers, motor drives, mobile phones, automotive systems, and other consumer applications.
Working Principle
The AO3409L_102 is a depletion-mode MOSFET, meaning it requires an input voltage less than ground for the MOSFET to turn on. This is easily achieved by a logic gate at the gate of the device, and then when active, the device allows current to flow from the source to the drain. Unlike BJTs, MOSFETs do not require a bias current to turn on, which makes them more reliable. The speed at which the MOSFET operates is also much faster than BJTs, making them great for high frequency applications.
The AO3409L_102 utilizes a dielectric insulation between the gate and the channel of the device, which prevents any direct current flow between the gate and the channel. This makes the MOSFET immune to the effects of temperature variations and time-dependent dielectric breakdown. One of the main characteristics that defines the operation of the AO3409L_102 is the gate threshold voltage, which is the minimum gate voltage at which the device can be switched on.
The AO3409L_102 also boasts excellent power handling capability and compatibility. Its maximum drain source voltage of 11V can easily handle the majority of consumer applications, and its maximum continuous drain current of 650mA ensures compatibility with a wide array of applications. It is also capable of withstanding high temperature ranges, making it suitable for both industrial and consumer applications.
Conclusion
In summary, the AO3409L_102 is a great choice for a wide range of applications. Its low gate-source threshold voltage, low RDS(on) and high power handling capability make it suitable for low voltage consumer and industrial applications, such as power switches, audio amplifiers, motor drives, and mobile phones. Its dielectric insulation between the gate and the channel of the device also provides enhanced reliability, temperature resistance, and time-dependent dielectric breakdown protection.
The specific data is subject to PDF, and the above content is for reference
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