Allicdata Part #: | 785-1331-2-ND |
Manufacturer Part#: |
AON6232 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 40V 22A 8DFN |
More Detail: | N-Channel 40V 22A (Ta), 85A (Tc) 2.3W (Ta), 83W (T... |
DataSheet: | AON6232 Datasheet/PDF |
Quantity: | 1000 |
Package / Case: | 8-PowerSMD, Flat Leads |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3800pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 2.3W (Ta), 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
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AON6232 is a single N-channel enhancement mode power MOSFET transistor with a high density cell ultra-small package. It is available in a wafer-level chip-scale package (WLCSP) with a 0.73mm2 footprint and uses an efficient p-channel structure to achieve low on-resistance (<0.24Ω). The AON6232 features low input gate charge (Q{}g) for fast switching performance and is designed for use in a wide range of applications, including power management, LCD power supplies, and motor control.
AON6232’s application field includes servers, laptop chargers, and power conversion applications. It offers a range of advantages over previous solutions such as improved power efficiency, reduced energy consumption, higher throughput rates, and lower operating costs. Furthermore, its high-speed switching capability and ultra-low RDS(ON) enables higher current throughput and lower losses when in operation.
The AON6232 works based on the principle of metal-oxide-semiconductor field-effect transistors (MOSFETs). In the MOSFET structure, an N-channel field-effect is created when electrons occupy the oxide-insulated channel formed between the semiconductor and the metal gate. When current is introduced at the gate, a voltage is created, allowing the current to flow from the source to drain. This type of device offers high-speed switching, low on-resistance, and low gate charge.
The AON6232 is designed with a split gate layout and high-side N-channel MOSFETs, which ensures high-speed switching performance and low gate charge. Additionally, the integrated wafer level chip scale package (WLCSP) allows further miniaturization, making the device ideal for applications with limited space requirements. The device also has a low output capacitance of just 6.8 pF and low gate to source resistance of just 0.02Ω.
The AON6232 offers a wide range of features and benefits that make it an ideal choice for power management applications. It showcases an ultra-small package with a 0.73mm2 footprint, an integrated wafer level chip scale package (WLCSP), high-speed switching performance, low on-resistance, and low gate charge. These advantages make the AON6232 an ideal choice for high current applications such as servers, laptop chargers, and power conversion.
The specific data is subject to PDF, and the above content is for reference
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