AON6232 Allicdata Electronics
Allicdata Part #:

785-1331-2-ND

Manufacturer Part#:

AON6232

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 40V 22A 8DFN
More Detail: N-Channel 40V 22A (Ta), 85A (Tc) 2.3W (Ta), 83W (T...
DataSheet: AON6232 datasheetAON6232 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AON6232 is a single N-channel enhancement mode power MOSFET transistor with a high density cell ultra-small package. It is available in a wafer-level chip-scale package (WLCSP) with a 0.73mm2 footprint and uses an efficient p-channel structure to achieve low on-resistance (<0.24Ω). The AON6232 features low input gate charge (Q{}g) for fast switching performance and is designed for use in a wide range of applications, including power management, LCD power supplies, and motor control.

AON6232’s application field includes servers, laptop chargers, and power conversion applications. It offers a range of advantages over previous solutions such as improved power efficiency, reduced energy consumption, higher throughput rates, and lower operating costs. Furthermore, its high-speed switching capability and ultra-low RDS(ON) enables higher current throughput and lower losses when in operation.

The AON6232 works based on the principle of metal-oxide-semiconductor field-effect transistors (MOSFETs). In the MOSFET structure, an N-channel field-effect is created when electrons occupy the oxide-insulated channel formed between the semiconductor and the metal gate. When current is introduced at the gate, a voltage is created, allowing the current to flow from the source to drain. This type of device offers high-speed switching, low on-resistance, and low gate charge.

The AON6232 is designed with a split gate layout and high-side N-channel MOSFETs, which ensures high-speed switching performance and low gate charge. Additionally, the integrated wafer level chip scale package (WLCSP) allows further miniaturization, making the device ideal for applications with limited space requirements. The device also has a low output capacitance of just 6.8 pF and low gate to source resistance of just 0.02Ω.

The AON6232 offers a wide range of features and benefits that make it an ideal choice for power management applications. It showcases an ultra-small package with a 0.73mm2 footprint, an integrated wafer level chip scale package (WLCSP), high-speed switching performance, low on-resistance, and low gate charge. These advantages make the AON6232 an ideal choice for high current applications such as servers, laptop chargers, and power conversion.

The specific data is subject to PDF, and the above content is for reference

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