| Allicdata Part #: | 785-1338-2-ND |
| Manufacturer Part#: |
AON6280 |
| Price: | $ 0.59 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 80V 17A 8DFN |
| More Detail: | N-Channel 80V 17A (Ta), 85A (Tc) 7.3W (Ta), 83W (T... |
| DataSheet: | AON6280 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.59200 |
| 10 +: | $ 0.57424 |
| 100 +: | $ 0.56240 |
| 1000 +: | $ 0.55056 |
| 10000 +: | $ 0.53280 |
| Vgs(th) (Max) @ Id: | 3.2V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 7.3W (Ta), 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3930pF @ 40V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 85A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The AON6280 is a single channel, 12-V, 0.15-ohm P-channel MOSFET with a dynamic drain-source on-resistance (RDSON) of 0.15 ohm. It is designed for applications requiring lower RDSON, ultra-low gate charge, and fast switching speeds. This MOSFET is post-passivated for superior reliability in high-temperature and continuously variable power dissipation environments.
The main applications for the AON6280 include power amplifiers, low-side power switches, audio amplifiers, and DC-DC converters. It is also ideally suited for portable and handheld applications that require high thermal performance and low power consumption.
The AON6280 utilizes a proprietary process technology to provide higher current handling capability and lower RDSON than conventional MOSFETs. This device uses a unique cell design that enables extremely fast switching speed and reduced gate charge and conduction losses. Additionally, the AON6280 features a low input capacitance, low thermal resistance, and low noise performance. It is also RoHS compliant, and can be manufactured in wafer form or in a Package-On-Package (POP) configuration
The working principle of the AON6280 is based on the use of a P-channel MOSFET (metal–oxide–semiconductor field-effect transistor) as its main power transistor. The MOSFET has two parts – the source and the drain – which have different types of gates (N-channel and P-channel, respectively). When a voltage is applied to the gate of the MOSFET, it creates a channel between the source and drain and the current freely passes through it. The drain-source on-resistance (RDSON) is independent of the gate-source voltage, and is the main characteristic of the AON6280.
The device also features an integrated bootstrap circuit that provides protection against reverse events in order to reduce ringing and minimize over-voltage stress. The bootstrap circuit is also essential for controlling the current in the device when it is in linear mode. The AON6280 can operate both in linear and nonlinear modes, and is optimized for switching applications. The device has very low switching energy that is necessary for high-speed switching applications.
The AON6280 is an ideal solution for applications that require high current handling, fast switching speeds and low RDSON values. Its post-passivated construction, extremely low gate charge, low leakage current, and low power consumption, makes it an ideal choice for a wide range of applications, including power amplifiers, audio amplifiers, DC-DC converters, and low-side power switches.
The specific data is subject to PDF, and the above content is for reference
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AON6280 Datasheet/PDF