| Allicdata Part #: | AON6314-ND |
| Manufacturer Part#: |
AON6314 |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CHANNEL 30V 85A 8DFN |
| More Detail: | N-Channel 30V 85A (Tc) 32.5W (Tc) Surface Mount 8-... |
| DataSheet: | AON6314 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.17600 |
| 10 +: | $ 0.17072 |
| 100 +: | $ 0.16720 |
| 1000 +: | $ 0.16368 |
| 10000 +: | $ 0.15840 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 32.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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AON6314 is a single low-side integrated power switch based on advanced HVET technology. The device offers an enable pin to control the switches between ON and OFF state. It provides superior RDS(on), Qg, and QOSS. Built-in logic level shift reduces the need of resistor and capacitor combinations to shift logic level. The device is suitable for many applications, such as power control and lighting systems, automotive systems, and home appliance electronics.
The AON6314 is a depletion-mode power metal-oxide-semiconductor field-effect transistor (MOSFET). It is constructed with an n-channel field-effect transistor and an integrated N drainsource resistor. In order to maximize the performance and minimize on-state resistance, the AON6314 is designed with a reverse-biased drain source voltage, enhancing the drain-source resistance. As a result, compared to the n-channel MOSFET, the on-state resistance of the AON6314 is significantly lower.
The AON6314 is designed as a low-side switch with a single-pole output. It offers excellent switching performance and low on-resistance. The level of the voltage applied to the gate terminal is lower than the level of the voltage applied to the source terminal in order to turn on the switch. When the level of the voltage applied to the gate terminal is higher than the level of the voltage applied to the source terminal, the switch turns off. The AON6314 is designed to ensure a fast switching time and high efficiency even when switching a large capacitor at high frequencies.
The AON6314 can also function as a high-side switch. The logic level shifter integrated within the device has a logic input level of 1.2V. This allows the device to be driven by a low voltage logic signal. In addition, its low power consumption makes it ideal for applications in which low power consumption is a must.
The AON6314 is designed for a wide range of applications. It can be used for controlling the power of an electronic device, such as a television, or for controlling lighting systems, such as those found in cars or home appliances. It can also be used for power supplies, ensuring an efficient and reliable power supply for the device.
In conclusion, the AON6314 is a single low-side power MOSFET that offers excellent performance, low on-state resistance, and low power consumption. Its integrated logic level shifter makes it ideal for controlling power in low-voltage logic applications. The AON6314 is suitable for a wide range of applications, such as power control, lighting systems, automotive systems, and home appliance electronics.
The specific data is subject to PDF, and the above content is for reference
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AON6314 Datasheet/PDF