AON6366E Allicdata Electronics
Allicdata Part #:

AON6366E-ND

Manufacturer Part#:

AON6366E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CHANNEL 30V 34A 8DFN
More Detail: N-Channel 30V 34A (Tc) 46W (Tc) Surface Mount 8-DF...
DataSheet: AON6366E datasheetAON6366E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 15V
Vgs (Max): ±20V
Series: AlphaMOS
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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AON6366E is a high voltage, low RDS(ON) and low gate charge NMOSFET. It is designed for high performance applications ranging from motor control inverters to power converters, power supplies, etc. It features very low in-line resistance and is compatible with any logic level MOSFET driver and fast body diode. The AON6366E is suitable for use in many applications such as DC/DC converters, AC/DC converters, power supplies and motor controllers.

The AON6366E incorporates a variety of features and technologies to enhance its performance. It has a small on-resistance that is optimized for small scalable designs, as well as minimal device loss. The temperature performance is also enhanced due to the use of advanced process technology. The design of the AON6366E also utilizes a reverse calender junction termination and a high-voltage-resistant solder pad to provide a high level of ruggedness and reliability.

The AON6366E is an N-channel MOSFET that utilizes a vertical double-diffused metal-oxide semiconductor (DMOS) structure. It has a wide range of features that are designed specifically for reliable and efficient operation. These features include low RDS(ON), low gate charge, and low input capacitance. The device also has a built-in Avalanche diode that can be triggered by an idle drain voltage of 8V to provide bottomless gate protection.

The AON6366E has a maximum drain-source voltage of 60V and a maximum output current of 30A. The maximum continuous dissipative power is 425W and can be used in a wide range of applications. The device has an operating temperature range of -55°C to 175°C and is also compatible with standard logic level drivers. In addition, the device can be used with a wide range of gate drivers such as bipolar, isolated and discrete drivers.

The AON6366E uses a common gate configuration to control the output voltage and current. This type of circuit allows for a wide range of operating parameters, including voltage, frequency, duty cycle, and even percentage of change in duty cycle. It also enables users to select the current limiting threshold, eliminating the need for extra circuits or programming to protect the device.

The AON6366E is a versatile, high-performance MOSFET. It is suitable for a wide range of applications, including motor control inverters, DC/DC converters, AC/DC converters and power supplies. The device can operate over a wide temperature range and is compatible with logic level drivers. It has a robust Avalanche diode built-in to protect the gate, and its reverse calender junction termination design and high-voltage-resistant solder pad provide high levels of reliability. All of these features combine to make the AON6366E the ideal choice for a variety of high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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