Allicdata Part #: | AON6404-ND |
Manufacturer Part#: |
AON6404 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 25A 8DFN |
More Detail: | N-Channel 30V 25A (Ta), 85A (Tc) 2.1W (Ta), 83W (T... |
DataSheet: | AON6404 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerSMD, Flat Leads |
Supplier Device Package: | 8-DFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta), 85A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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AON6404 is a single-channel enhancement-mode (normally-off) power MOSFET with a rated drain-source voltage of 20V, rds(on) as low as 40mOhm, and typical Coss of 1.4pF. The device draws a maximum gate-source leakage current of 1mA and a maximum gate charge of only 8nC. It is designed for use in a wide range of DC-DC circuits and load switches, including high-end servers, desktop and notebook PCs, LCD monitors, tablet PCs, power amplifiers and other portable applications.
AON6404\'s applications extend beyond just providing a superior switching performance. It also provides advanced protection features that prevent against over-temperature, over-current, and over-voltage conditions, allowing it to protect both the device and the downstream components. In addition, the device also features advanced diagnostic features, including temperature-compensated temperature protection, ringing suppression, and optional delay control. The AON6404 has a low on-resistance, low gate charge, and high current carrying capability, making it an ideal choice for a number of DC-DC applications such as load switches, power amplifiers, and high-end server applications.
The working principle of AON6404 mainly relies on the fact that an electric field can be created by the application of a control voltage that affects the behavior of the channel. This is because a MOSFET is an insulated-gate field-effect transistor, which consists of two regions of semiconductor referred to as the source and the drain. The source is connected to the gate through a thin oxide layer, which is where the control voltage is applied. When the control voltage is applied to the gate, an electric field is created, which affects the behavior of the channel. This in turn causes changes in the conductivity of the channel and consequently in the current flow through the device.
The AON6404 features a single-channel design, which allows it to easily handle high-frequency switching without the need for high gate resistance or voltage requirements. This makes it an ideal choice for use in low-noise switching applications, such as power amplifiers or load switches. The device also features a robust safety mechanism which provides additional protection against over-temperature, over-current, and over-voltage conditions, helping to ensure long device life.
The AON6404 provides a higher power-handling capability than its predecessors, with a maximum drain current of 115A and a maximum drain-source voltage of 20V. It is also compatible with a wide range of process technologies, making it an excellent choice for applications in both low-power and high-power applications.
In conclusion, the AON6404 is a high performance single-channel MOSFET with an excellent combination of power, frequency response, and protection features. Its low on-resistance, low gate charge, and high current capability make it ideal for a wide range of DC-DC, load switch, and power amplifier applications. Its advanced protection features and low gate charge also make it an ideal choice for protecting both the device and any downstream components.
The specific data is subject to PDF, and the above content is for reference
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