Allicdata Part #: | AON6413_101-ND |
Manufacturer Part#: |
AON6413_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V 8DFN |
More Detail: | P-Channel 30V 22A (Ta), 32A (Tc) 6.2W (Ta), 48W (T... |
DataSheet: | AON6413_101 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-DFN-EP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 6.2W (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2142pF @ 15V |
Vgs (Max): | ±25V |
Series: | -- |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Last Time Buy |
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AON6413_101 Application Field and Working PrincipleThe AON6413_101 is a type of single N-channel MOSFET. It is an 80V depletion-mode MOSFET and is commonly used as a switch in various application areas. It is packaged in an industry-standard ADSOP-6PU (plastic ultra small) package, making it compact and suitable for space-constrained designs.
The main application areas of the AON6413_101 are power management, LED lighting, speed control, and automotive applications. The MOSFET can be used to switch the power supply of integrated circuits and to control the current in motors, DC/DC converters, motor drives, and solenoid applications. It is well-suited for portable electronic devices, given its low power consumption and chip-size packaging.
The AON6415_101 has an on-state resistance of 2-4 ohms and a channel publication voltage of 8V. It supports a wide range of frequencies from DC to 12MHz and can be used for high-speed switching applications. It has a high off-state output current of 150mA and a high peak-drain current of 120mA. Furthermore, it has a minimum operating temperature of -55°C and a maximum operating temperature of 170°C.
The working principle of the AON6413_101 is based on the phenomenon of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFET is essentially a transistor that uses an insulated gate to control an electric field. The key to MOSFET operations is the gate voltage, which acts as an on/off switch for the current flow through the transistor. The AON6413_101 has an on-state resistance of 2-4 ohms. This resistance changes when the gate voltage is applied, adjusting the current level through the MOSFET, which is high when the gate voltage is low, and low when the gate voltage is high. When the gate voltage is high, the MOSFET operates in its saturation region, and when the gate voltage is low, the MOSFET operates in its cut-off region. By adjusting the gate voltage, the MOSFET can be used to control the current flow.
In summary, the AON6413_101 is a type of single N-channel MOSFET that is well-suited for use in power management, LED lighting, speed control, and automotive applications. It has a low power consumption, an on-state resistance of 2-4 ohms, a channel publication voltage of 8V, and a high peak-drain current of 120mA. Additionally, it supports a wide range of frequencies and has a minimum operating temperature of -55°C and a maximum operating temperature of 170°C. The working principle of the AON6413_101 is based on the phenomenon of MOSFET and the key is the gate voltage, which acts as an on/off switch for the current flow through the transistor.
The specific data is subject to PDF, and the above content is for reference
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