AON6413_101 Allicdata Electronics
Allicdata Part #:

AON6413_101-ND

Manufacturer Part#:

AON6413_101

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 8DFN
More Detail: P-Channel 30V 22A (Ta), 32A (Tc) 6.2W (Ta), 48W (T...
DataSheet: AON6413_101 datasheetAON6413_101 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.2W (Ta), 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 15V
Vgs (Max): ±25V
Series: --
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Last Time Buy
Description

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AON6413_101 Application Field and Working Principle

The AON6413_101 is a type of single N-channel MOSFET. It is an 80V depletion-mode MOSFET and is commonly used as a switch in various application areas. It is packaged in an industry-standard ADSOP-6PU (plastic ultra small) package, making it compact and suitable for space-constrained designs.

The main application areas of the AON6413_101 are power management, LED lighting, speed control, and automotive applications. The MOSFET can be used to switch the power supply of integrated circuits and to control the current in motors, DC/DC converters, motor drives, and solenoid applications. It is well-suited for portable electronic devices, given its low power consumption and chip-size packaging.

The AON6415_101 has an on-state resistance of 2-4 ohms and a channel publication voltage of 8V. It supports a wide range of frequencies from DC to 12MHz and can be used for high-speed switching applications. It has a high off-state output current of 150mA and a high peak-drain current of 120mA. Furthermore, it has a minimum operating temperature of -55°C and a maximum operating temperature of 170°C.

The working principle of the AON6413_101 is based on the phenomenon of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFET is essentially a transistor that uses an insulated gate to control an electric field. The key to MOSFET operations is the gate voltage, which acts as an on/off switch for the current flow through the transistor. The AON6413_101 has an on-state resistance of 2-4 ohms. This resistance changes when the gate voltage is applied, adjusting the current level through the MOSFET, which is high when the gate voltage is low, and low when the gate voltage is high. When the gate voltage is high, the MOSFET operates in its saturation region, and when the gate voltage is low, the MOSFET operates in its cut-off region. By adjusting the gate voltage, the MOSFET can be used to control the current flow.

In summary, the AON6413_101 is a type of single N-channel MOSFET that is well-suited for use in power management, LED lighting, speed control, and automotive applications. It has a low power consumption, an on-state resistance of 2-4 ohms, a channel publication voltage of 8V, and a high peak-drain current of 120mA. Additionally, it supports a wide range of frequencies and has a minimum operating temperature of -55°C and a maximum operating temperature of 170°C. The working principle of the AON6413_101 is based on the phenomenon of MOSFET and the key is the gate voltage, which acts as an on/off switch for the current flow through the transistor.

The specific data is subject to PDF, and the above content is for reference

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