AON6370_002

Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Package / Case:	8-VDFN Exposed Pad
Supplier Device Package:	8-DFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	6.2W (Ta), 26W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	840pF @ 15V
Vgs (Max):	±20V
Series:	aMOS™
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Rds On (Max) @ Id, Vgs:	7.2 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	23A (Ta), 47A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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AON6370_002: Field of Application and Working Principle

AON6370_002 is a single voltage enhancement mode Field Effect Transistor (FET) driver suitable for high power density switching applications. This transistor has been designed to handle high power loads such as pumps, motors, heating systems, as well as automotive applications. It has a low on-resistance and is able to drive a very large number of external FETs.

Features

AON6370_002 has a voltage input range of 3-30 V and a high power output current of 6A (continuous). It has a wide temperature range -40 to +125°C, an on-resistance of 0.5mΩ, thermal protection with overtemperature shutdown, and a low standby current (2.2uA). It also has overtemperature protection, PWM input voltage and output current control, and adjustable slew rate setting.

Applications

AON6370_002 is suitable for a variety of applications in industrial, automotive, and consumer electronics goods. It is especially useful in applications that require high power density switching and high current drive such as motor control, lighting control, automotive systems such as ABS braking systems, and inverters. This transistor driver can be used as an output driver in systems that require a high current load such as motors, pumps, and solenoids.

Working Principle

AON6370_002 works by using an input voltage that is applied to the gate of the FET. The FET forms an internal depletion region between its source and drain terminals. This depletion region changes when the gate voltage gets below the threshold voltage of the FET. This, in turn, changes the conductance of the FET and allows current to flow from source to drain, enabling the FET to switch on.The FET is usually connected in series with a pull-down resistor between gate and source. This pull-down resistor ensures that the gate voltage is always less than the threshold voltage of the FET and the FET is kept in its OFF state when there is no input voltage. The AON6370_002 is also able to vary the output current according to the input PWM (Pulse-width modulation) signal. This is implemented by varying the size of the internal depletion region in accordance with the input PWM signal. This makes it possible to control the current output of the FET and also reduces turn-on and turn-off delays.In addition, the AON6370_002 has an adjustable slew-rate setting which allows the user to configure the rate of increase and decrease in output current. This setting is used to ensure that the FET does not overshoot or undershoot the desired level.

Conclusion

The AON6370_002 is a single voltage enhancement mode FET driver that has been designed to handle high power loads. It is ideal for applications such as motor control, lighting control, automotive systems, and inverters. It has a voltage input range of 3-30 V and a high power output current of 6A (continuous). It also has features such as overtemperature protection, PWM input voltage and output current control, and adjustable slew rate settings.

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