Allicdata Part #: | AON6424A-ND |
Manufacturer Part#: |
AON6424A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V DFN |
More Detail: | N-Channel 30V 11A (Ta), 41A (Tc) 2W (Ta), 25W (Tc)... |
DataSheet: | AON6424A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 15V |
Vgs (Max): | ±12V |
Series: | AlphaMOS |
Vgs(th) (Max) @ Id: | 1.7V @ 250µA |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 41A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Description
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AON6424A devices are advanced, high-voltage, low-power, single-channel logic-level enhancement mode (normally-off) field-effect transistors (FETs). The AON6424A used UMOS, with a thin layer of ultra-thin dielectric material having a thickness of about 1 nanometer and a thickness of about 1.2 nanometers. This thin dielectric layer reduces the effective capacitance of the surface oxide layer, resulting in an extremely low gate leakage current and a low threshold voltage.The AON6424A has a wide range of application fields, including various switches, analog switches, window circuits, level clamping and limiting, current mirror circuits, and other digital circuits. It has a structure that is suitable for use in high-voltage circuits and systems, including TV raster scanning, recorders and game consoles, as well as automotive circuits.The most commonly used operating mode of the AON6424A is logic-controlled enhancement mode (normally-off), wherein the output is in the off state when the gate voltage is less than a certain threshold voltage. The threshold voltage is relatively low (typically between 0.6V and 1.2V), and the off-state drain current is extremely low (typical values range from 0.2uA to 2uA).The basic circuit configuration for the AON6424A involves connecting two transistors in series, with one being the device\'s active area and the other being the gate. When the gate voltage is low, the off-state drain current is very low, and the device acts like an open switch. When the gate voltage is increased past the threshold voltage, the device transitions to an on state, and the drain current increases.The AON6424A\'s output characteristics, such as the on/off ratio and switching time, can also be adjusted by varying the Gate-to-Source voltage. The on/off ratio is determined by the width of the device\'s gate, which is adjustable depending on the voltage applied. The switching speed can also be controlled by varying the voltage, with the transition from the off-state to the on-state taking place faster when higher gate voltages are applied.The AON6424A also has a wide array of electrical characteristics, such as high voltage ratings, high drain current capacity, small packages, low Vth and low gate capacitance. It can operate in temperatures between -55°C and 125°C. It also has a tolerance of up to ± 8% in the on-state voltage, making it extremely reliable.Overall, the AON6424A is an excellent device for a wide range of applications, including switching, analog switching, clamping and limiting, current mirror circuits and other digital circuits. Despite its small size and relatively low gate voltage, it has excellent performance characteristics that make it ideal for operating in high-voltage circuits and systems.
The specific data is subject to PDF, and the above content is for reference
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