AON6758_101 Allicdata Electronics
Allicdata Part #:

AON6758_101-ND

Manufacturer Part#:

AON6758_101

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V
More Detail: N-Channel 30V 27A (Ta), 32A (Tc) 4.1W (Ta), 41W (T...
DataSheet: AON6758_101 datasheetAON6758_101 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.1W (Ta), 41W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 15V
Vgs (Max): ±20V
Series: AlphaMOS
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AON6758_101 Application Field and Working Principle

AON6758_101 is an advanced n-channel enhancement mode field-effect transistor (MOSFET) manufactured by Taiwan Semiconductor Company (TSMC). The device is a wide voltage* drain optimised MOSFET featuring switching up to 40V, supported by a low gate charge, low RDS_on, low input gate capacitor and very high level of figures of merit, resulting in faster switching frequency and excellent EMI performance.

It is specifically designed for high power applications in low voltage, requiring lower gate charge and less power dissipation. The device features a 100V drain optimized drain-source breakdown voltage (BV_DSS), <1.0nA maximum I_DS leakage current at 25°C and improved <2.2Ω R_DS(on) at 10V gate drive at 25°C. Its high integration technology reduces the positioning and soldering area, simplifying the PCB layout. Additionally, its packages are adapted to effectively support power surface mounting, reducing the number of layers and deployment costs.

Working Principle of AON6758_101

The operating principle of AON6758_101 is based upon the following theory: that a small electrical current passed through a metal-oxide-semiconductor (MOS) structure will cause a corresponding large change in the output voltage and current. This is due to a process known as “channel length modulation”.

The MOS transistor consists of a drain terminal, a source terminal, the gate terminal, and a thin layer of insulating material – silicon dioxide – which separates the drain terminal from the gate terminal. When a voltage is applied across the gate-to-drain terminals, the thin gate-to-drain insulated layer, which is also known as the channel region, becomes “switched on”.

This allows current to flow between the source and drain terminals, which then produces a corresponding change in the output voltage and current. This process of channel length modulation is what enables the AON6758_101 to operate as a MOSFET.

Applications of AON6758_101

AON6758_101 is used in a variety of applications, due to its unique design and features. Thanks to its ultra-low on-resistance and exceptional thermal performance, AON6758_101 is widely used in a variety of applications such as power management, audio systems, motor control, laptop charging, mobile phone battery management, and automotive applications.

AON6758_101 is also used in a variety of power converters, especially those requiring efficient power handling and higher efficiencies, ranging from switching power supplies, motor drivers and other power converters, to adjustable DC-DC converters and charge pumps.

In addition to its high performance levels, the device provides an ultra-low R_DS(on) value, making it an excellent choice for designs requiring low power dissipation. This also makes it an ideal choice for automotive and industrial applications, as it can help optimize efficiency and minimize energy consumption.

Due to its small size and low power consumption, the device is also used in applications where space constraints are a major issue, such as portable electronics and hand-held devices. Moreover, its low input gate capacitance allows for fast switching speeds, resulting in improved system performance and better EMI performance.

Conclusion

AON6758_101 is an advanced n-Channel MOSFET designed for high power applications in low voltage. It provides a range of attractive features, such as low input gate capacitance, low gate charge, low RDS_on and very high figure of merit. It also offers superior thermal and electrical characteristics, which makes it suitable for a variety of applications, ranging from power management, audio systems, motor control to automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "AON6" Included word is 40
Part Number Manufacturer Price Quantity Description
AON6538 Alpha & ... -- 1000 MOSFET N CH 30V 30A 8DFNN...
AON6482 Alpha & ... -- 1000 MOSFET N-CH 100V 28A 5X6D...
AON6224 Alpha & ... -- 1000 MOSFET N-CHANNEL 100V 34A...
AON6380 Alpha & ... -- 1000 MOSFET N-CH 30V 24V 8DFN
AON6284A Alpha & ... 0.35 $ 1000 MOSFET N-CHANNEL 80V 48A ...
AON6270 Alpha & ... -- 1000 MOSFET N-CH 75V 85A DFN5X...
AON6152 Alpha & ... -- 1000 MOSFET N-CHANNEL 45V 100A...
AON6974A Alpha & ... -- 1000 MOSFET 2N-CH 30V 22A/30A ...
AON6448L Alpha & ... 0.0 $ 1000 MOSFET N-CH 80V 8DFNN-Cha...
AON6452 Alpha & ... -- 3000 MOSFET N-CH 100V 6.5A 8DF...
AON6998 Alpha & ... 0.34 $ 1000 MOSFET 2N-CH 30V 19A/26A ...
AON6435 Alpha & ... 0.19 $ 1000 MOSFET P-CH 30V 12A 8DFNP...
AON6411 Alpha & ... -- 6000 MOSFET P-CH 20V 47A 8DFNP...
AON6403 Alpha & ... -- 1000 MOSFET P-CH 30V 21A 8DFNP...
AON6354 Alpha & ... -- 1000 MOSFET N-CHANNEL 30V 83A ...
AON6448L_001 Alpha & ... 0.0 $ 1000 MOSFET N-CH 80V 8DFNN-Cha...
AON6407 Alpha & ... -- 75000 MOSFET P-CH 30V 32A 8DFNP...
AON6454A_001 Alpha & ... 0.0 $ 1000 MOSFET N-CH 150V 8DFNSurf...
AON6358 Alpha & ... -- 3000 MOSFET N-CH 30V 42A DFNN-...
AON6518 Alpha & ... -- 1000 MOSFET N-CH 30V 85A 8DFNN...
AON6230 Alpha & ... -- 1000 MOSFET N-CH 40V 57.5A 8DF...
AON6996 Alpha & ... 0.29 $ 1000 MOSFET 2N-CH 30V 50A/60A ...
AON6702 Alpha & ... -- 1000 MOSFET N-CH 30V 5X6DFNN-C...
AON6454A Alpha & ... -- 1000 MOSFET N-CH 150V 5A DFN5X...
AON6244 Alpha & ... -- 1000 MOSFET N-CH 60V 15A 8DFNN...
AON6936 Alpha & ... -- 1000 MOSFET 2N-CH 30V 22A/40A ...
AON6210 Alpha & ... -- 1000 MOSFET N-CH 30V 28A 8DFNN...
AON6508_101 Alpha & ... 0.0 $ 1000 MOSFET N-CH DFNN-Channel ...
AON6562 Alpha & ... -- 1000 MOSFET N-CH 30VN-Channel ...
AON6884L Alpha & ... -- 1000 MOSFET 2 N-CHANNEL 40V 34...
AON6758 Alpha & ... -- 1000 MOSFET N-CH 30V 32A 8DFNN...
AON6946 Alpha & ... -- 1000 MOSFET 2N-CH 30V 14A/18A ...
AON6450L_001 Alpha & ... 0.0 $ 1000 MOSFET N-CH 100V 8DFNSurf...
AON6906A Alpha & ... -- 1000 MOSFET 2N-CH 30V 9.1A/10A...
AON6426 Alpha & ... -- 1000 MOSFET N-CH 30V 14A 8DFNN...
AON6544 Alpha & ... -- 1000 MOSFET N-CH 30V 85A 8-DFN...
AON6414A Alpha & ... -- 1000 MOSFET N-CH 30V 5X6DFNN-C...
AON6362 Alpha & ... -- 1000 MOSFET N-CH 30V 27A DFNN-...
AON6282 Alpha & ... -- 1000 MOSFET N-CH 80V 26.5A 8DF...
AON6414AL Alpha & ... -- 1000 MOSFET N-CH 30V DFNN-Chan...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics