Allicdata Part #: | AON6758_101-ND |
Manufacturer Part#: |
AON6758_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V |
More Detail: | N-Channel 30V 27A (Ta), 32A (Tc) 4.1W (Ta), 41W (T... |
DataSheet: | AON6758_101 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4.1W (Ta), 41W (Tc) |
FET Feature: | Schottky Diode (Body) |
Input Capacitance (Ciss) (Max) @ Vds: | 1975pF @ 15V |
Vgs (Max): | ±20V |
Series: | AlphaMOS |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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AON6758_101 Application Field and Working Principle
AON6758_101 is an advanced n-channel enhancement mode field-effect transistor (MOSFET) manufactured by Taiwan Semiconductor Company (TSMC). The device is a wide voltage* drain optimised MOSFET featuring switching up to 40V, supported by a low gate charge, low RDS_on, low input gate capacitor and very high level of figures of merit, resulting in faster switching frequency and excellent EMI performance.
It is specifically designed for high power applications in low voltage, requiring lower gate charge and less power dissipation. The device features a 100V drain optimized drain-source breakdown voltage (BV_DSS), <1.0nA maximum I_DS leakage current at 25°C and improved <2.2Ω R_DS(on) at 10V gate drive at 25°C. Its high integration technology reduces the positioning and soldering area, simplifying the PCB layout. Additionally, its packages are adapted to effectively support power surface mounting, reducing the number of layers and deployment costs.
Working Principle of AON6758_101
The operating principle of AON6758_101 is based upon the following theory: that a small electrical current passed through a metal-oxide-semiconductor (MOS) structure will cause a corresponding large change in the output voltage and current. This is due to a process known as “channel length modulation”.
The MOS transistor consists of a drain terminal, a source terminal, the gate terminal, and a thin layer of insulating material – silicon dioxide – which separates the drain terminal from the gate terminal. When a voltage is applied across the gate-to-drain terminals, the thin gate-to-drain insulated layer, which is also known as the channel region, becomes “switched on”.
This allows current to flow between the source and drain terminals, which then produces a corresponding change in the output voltage and current. This process of channel length modulation is what enables the AON6758_101 to operate as a MOSFET.
Applications of AON6758_101
AON6758_101 is used in a variety of applications, due to its unique design and features. Thanks to its ultra-low on-resistance and exceptional thermal performance, AON6758_101 is widely used in a variety of applications such as power management, audio systems, motor control, laptop charging, mobile phone battery management, and automotive applications.
AON6758_101 is also used in a variety of power converters, especially those requiring efficient power handling and higher efficiencies, ranging from switching power supplies, motor drivers and other power converters, to adjustable DC-DC converters and charge pumps.
In addition to its high performance levels, the device provides an ultra-low R_DS(on) value, making it an excellent choice for designs requiring low power dissipation. This also makes it an ideal choice for automotive and industrial applications, as it can help optimize efficiency and minimize energy consumption.
Due to its small size and low power consumption, the device is also used in applications where space constraints are a major issue, such as portable electronics and hand-held devices. Moreover, its low input gate capacitance allows for fast switching speeds, resulting in improved system performance and better EMI performance.
Conclusion
AON6758_101 is an advanced n-Channel MOSFET designed for high power applications in low voltage. It provides a range of attractive features, such as low input gate capacitance, low gate charge, low RDS_on and very high figure of merit. It also offers superior thermal and electrical characteristics, which makes it suitable for a variety of applications, ranging from power management, audio systems, motor control to automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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