
Allicdata Part #: | 800-3748-2-ND |
Manufacturer Part#: |
AON6268 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 60V 44V 8DFN |
More Detail: | N-Channel 60V 44A (Tc) 56W (Tc) Surface Mount 8-DF... |
DataSheet: | ![]() |
Quantity: | 9000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | 8-PowerSMD, Flat Leads |
Supplier Device Package: | 8-DFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TA) |
Power Dissipation (Max): | 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2520pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | AlphaSGT™ |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AON6268 is a nano-scale MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is designed for use in portable electronic devices and other battery-powered applications. This type of transistor is a single N-channel MOSFET, combining the performance of both junction field transistors (JFETs) and metal oxide semiconductor transistors (MOSFETs). The AON6268 is available in two compact packages with an option for a low on-resistance value and is manufactured using the industry-leading Nanoscale MOSFET process.
MOSFETs are well-known as an efficient form of transistor. They are typically used in integrated circuits as an efficient and cost-effective way to control electrical current passing through circuits. The AON6268 is no different and can be used as an easily operable switch in a circuit. The AON6268 transistor uses a metal oxide semiconductor as the gate of the transistor which allows the current passing through the transistor to be controlled by applying a voltage across the gate.
The metal oxide semiconductor used in the AON6268 consists of metal-based compounds, such as titanium or tantalum, which act as the gate between the source and drain of the transistor. By applying a positive or negative charge to the gate of the transistor, an electrical field is created across the gate which controls the current passing through the transistor. The AON6268 also utilizes a third terminal known as the body terminal, which helps to reduce the power consumption of the device by allowing certain voltages to pass while other voltages remain blocked.
One of the main advantages of the AON6268 is its low on-resistance value. This is a measure of how much current is needed in order to switch the transistor on and off. With a low on-resistance value, the device requires less power to switch on and off, making it ideal for battery-powered applications. The device also has a maximum drain-source on-resistance of only 60 mΩ and has been designed to handle a maximum drain-source voltage of 20 V.
The AON6268 makes use of the Stacked Cell Technology (SCT) manufacturing process. This process reduces the size of the device without compromising on performance. This in turn reduces the overall power consumption of the device and increases the performance of the device. In addition, the SCT process also reduces the manufacturing cost of the device, making it more cost-effective.
The AON6268 is the perfect solution for applications that require low-power switches in portable applications. By combining the efficient performance of the SCT manufacturing process with the low on-resistance value, the AON6268 can provide a reliable switching solution for a wide range of electronic applications. This makes the AON6268 an ideal choice for applications such as power conversion in laptops, wireless charging solutions and AC/DC switching.
The specific data is subject to PDF, and the above content is for reference
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