| Allicdata Part #: | 785-1345-2-ND |
| Manufacturer Part#: |
AON6426 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 30V 14A 8DFN |
| More Detail: | N-Channel 30V 14A (Ta), 65A (Tc) 2W (Ta), 42W (Tc)... |
| DataSheet: | AON6426 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta), 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 65A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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AON6426 is a 650V N-Channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that utilizes trench technology to provide superior RDS (ON) performance with ultra-low gate charge and excellent gate Threshold Voltage temperature stability. It offers an easy to use, cost-effective solution for a variety of applications.
The AON6426 is specifically designed for operation at high voltages and offers excellent on-state resistance, high transconductance and a low gate charge. The device is capable of operating over an operating temperature range from -55°C to 150°C, which makes it suitable for a wide range of applications. The gate threshold voltage is temperature stable over the entire temperature range, allowing for a robust design.
The AON6426 is used in a variety of applications, including power supplies, motor drive circuits, automotive power management and battery management systems. The device is used to control the current flow in DC-DC converters and power management circuits. It can also be used in lighting control circuits and audio amplifiers.
The AON6426 is built using a DMOS process that combines high-frequency power MOSFETs, gate drivers and RC networks. The device can be configured with gate charge control circuits that provide dynamic gate voltage control. This allows the device to control current or voltage levels in an accurately controlled manner.
The working principle of the AON6426 MOSFET is based on the electrostatic attraction between the gate and channel. When a small voltage is applied at the gate and channel terminals, allowing a current to flow between them, a channel of electrons is formed. This allows the transistor to act as a switch. The current flow is controllable by changing the voltage applied at the gate terminal. Higher voltages create stronger electrostatic attraction which will allow for a stronger current flow.
The device can be used in a variety of applications that require high voltage and current control. The device is well suited for use in switching power supplies, motor control circuits, LED lighting, and battery management systems. It can also be used in automotive and consumer electronics applications that require accurate voltage regulation.
The AON6426 is an attractive solution for engineers who require a reliable, high-performance, low-cost MOSFET. The device comes in a small package and offers low gate charge, excellent temperature stability and excellent on-state resistance. The device is also well suited for a wide range of applications due to its temperature-stable gate threshold voltage.
The specific data is subject to PDF, and the above content is for reference
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AON6426 Datasheet/PDF