| Allicdata Part #: | 785-1575-2-ND |
| Manufacturer Part#: |
AON6435 |
| Price: | $ 0.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET P-CH 30V 12A 8DFN |
| More Detail: | P-Channel 30V 12A (Ta), 34A (Tc) 4.1W (Ta), 31W (T... |
| DataSheet: | AON6435 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.15200 |
| 10 +: | $ 0.14744 |
| 100 +: | $ 0.14440 |
| 1000 +: | $ 0.14136 |
| 10000 +: | $ 0.13680 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 4.1W (Ta), 31W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 15V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 17 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 34A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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AON6435 is a single-channel low voltage enhancement mode N-Channel MOSFET. This device has an ultrathin and ultra low on resistance package. Widely used in cellular phones, handheld device, tablets, power supplies, solid state appliances, and multiple portable device applications, AON6435 is an ideal choice for ultra-small and ultra-thin applications requiring low on-resistance and logic-level gate drive.
AON6435 has an operating voltage ranging from 3.3V Vdss (Drain-to-Source voltage) with maximum current capability of 4.7A and an on-resistance of 0.55 ohms. This device has low gate threshold voltage of 0.3V, which makes it ideal for low voltage applications. The maximum Safe Operating Area (SOA) ensures that the AON6435 adequately protects itself from thermal runaway of the power supply.
AON6435 can be used for a range of switching or amplifying applications on a variety of devices and machines. As an example, it can be used in cellular phones, computers, digital TVs and other devices that require high switching speeds, high efficiency and low power consumption. As the device is cost-effective, it is one of the main choices for high volume applications.
The working principle of AON6435 is simple. When sourcing current, the N-channel MOSFET provides a low-resistance path between the source and drain terminals. When gate voltage is applied, this path is opened and current flow is stopped. When gate voltage is removed, the path is closed again and current flow is resumed.
AON6435 is designed in such a way that it offers one of the lowest on-resistance and gate-to-drain capacitance values on the market. This ensures that your device can perform at its maximum capabilities. Additionally, AON6435 also features a fast switching speed, enabling faster response times for your applications.
The device is also very reliable and provides high noise immunity, ensuring that your device will continue to operate normally even in noisy environments. AON6435 also features low leakage current and high voltage breakdown, making it an ideal choice for applications with high voltage levels.
To sum up, AON6435 is an excellent choice for a variety of applications, especially in low voltage and high speed switching applications. Its low on-resistance and gate-to-drain capacitance values, combined with its low leakage current and high voltage breakdown make it an excellent choice for noise immunity and further reliability.
The specific data is subject to PDF, and the above content is for reference
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AON6435 Datasheet/PDF