AON6508 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	8-PowerSMD, Flat Leads
Supplier Device Package:	8-DFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	4.2W (Ta), 41W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2010pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	49nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.2 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	29A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

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AON6508 is a special integrated field-effect transistor (FET) designed for applications requiring high-speed signal conditioning and/or signal switching. It is a single-gate FET device that can be used in a wide variety of applications. The AON6508 is identified as a single-gate FET because it has only one gate terminal. This makes it useful for applications where size and simplicity are key factors.The AON6508 is a high-speed, low-voltage logic device that can handle signal switching and/or signal conditioning. It is specifically designed to work with high-speed logic signals and/or signals operating at low voltages. It can handle signal conditioning operation such as level shifting and buffering, allowing it to be used in applications that require high-speed operation, low power consumption, and small size. The AON6508 operates in the voltage range from 2.5V to 4.5V.The AON6508 is fabricated using advanced fabrication processes. It uses two kinds of technologies: a vertical thin-film transistor (TFT) structure and a complementary metal-oxide semiconductor (CMOS) platform. The two kinds of technologies are combined in a single device, allowing it to offer high-performance and high-precision signal conditioning and/or switching operation.The working principle of the AON6508 is based on the operation of the field-effect transistor (FET). This type of transistor uses an electric field, created by a gate voltage, to control the conductivity of a channel between source and drain. When a gate voltage is applied, the electric field is created, which controls the width of the channel. The wider the channel, the higher the current that can flow through it. When the gate voltage is increased, the channel is widened, allowing more current to flow through the channel. Conversely, when the gate voltage is decreased, the channel is narrowed, and the amount of current that can flow through it decreases.The AON6508 is well-suited for a variety of applications requiring high-speed switching and/or signal conditioning operation. It can be used in consumer electronics, automotive systems, industrial control systems, medical equipment, and other applications that require a high-speed logic device. Its small size, low power consumption, and high-performance make it suitable for these types of applications.The AON6508 is a highly reliable device and offers a long lifetime. It has a maximum working temperature of 150°C, which allows it to be used in a variety of environments. It is also immune to EMI (electromagnetic interference), allowing it to provide reliable performance in industrial, medical, and other applications.In summary, the AON6508 is a highly reliable single-gate FET device designed for high-speed switching and/or signal conditioning operations. It is designed for applications where size and simplicity are of importance. It is suitable for a variety of applications, including consumer electronics, automotive systems, industrial control systems, and medical equipment.

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