| Allicdata Part #: | 785-1367-2-ND |
| Manufacturer Part#: |
AON6514 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 30V 23A 8DFN |
| More Detail: | N-Channel 30V 23A (Ta), 30A (Tc) 4.1W (Ta), 25W (T... |
| DataSheet: |  AON6514 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 4.1W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 951pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 22.5nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 5 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 30A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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AON6514 is a semiconductor device in the form of an integrated circuit. It is an advanced power MOSFET, with higher power density and higher efficiency than conventional power MOSFETs. It is also known as a lateral power MOSFET or a DMOSFET and is typically used as a voltage-controlled switch or linear amplifier in various applications.AON6514 works on the principle of field-effect transistor (FET) technology. A FET is a type of transistor in which electrical current or voltage flows through a channel of semiconductor material between two terminals, known as the source and drain. The current is moderated by means of an electric field generated by a gate terminal. The amount of current that flows between the two terminals is determined by the voltage applied to the gate terminal.The AON6514 uses a DMOSFET (double-diffused metal-oxide semiconductor field-effect transistor) structure, which provides higher power density and higher efficiency than the traditional power MOSFETs. The DMOSFET structure allows the drain electrode to extend deep into the silicon substrate below the gate, thus providing improved current flow under the gate, making it ideal for high-speed switching applications.The AON6514 has a low input capacitance and low drain-source on-resistance, making it suitable for high-voltage and high-current applications. It can be used in switching regulators and motor drives, as well as in power converters and other power management applications. It is also suitable for use in applications such as telecommunications, lighting and security control.The AON6514 is available in a range of different packages, from a 3-terminal SOT-23 package to a 4-terminal D2PAK package. It also offers a range of drain current ratings, from 10mA to 500mA. The device has an input voltage rating of up to 800V and a maximum gate voltage of 20V. It also has an operating temperature range of -40°C to 125°C.In conclusion, the AON6514 is an advanced power MOSFET designed for use in a range of high-voltage, high-current applications. It makes use of the DMOSFET structure and provides excellent current flow and low input capacitance. It is available in a range of packages and has a wide operating temperature range.
The specific data is subject to PDF, and the above content is for reference
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