AON6516

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The AON6516 is a single-channel, monolithic low-side switch that is designed specifically for applications that require low on-state resistance, low input power dissipation, and low gate drive power. The device features an N-channel enhancement mode power MOSFET that is optimized for low gate charge and has a fast turn-off time. The integrated switch includes both a gate driver and protections. This integration helps to simplify the design process while providing superior power saving.

The AON6516 is ideal for use in DC/DC converters, motor control, general power control, and power MOSFET replacement applications. Its low on-state resistance provides improved power management efficiency. Its low-power operation and low power dissipation makes it an ideal choice for battery operated and portable designs. Additionally, the device supports a wide range of operating voltages, from 3V to 20V, giving designers flexibility in selecting the ideal power source for their application.

The AON6516 is designed with two integrated protection circuits. The over-voltage protection (OVP) provides voltage clamping when the voltage across the drain and source exceeds the device’s rating. The reverse-current protection (RCP) allows the device to protect against back flows. The over-temperature protection (OTP) is provided by a thermal sensor that will shut down the FET if the junction temperature exceeds 125°C.

The AON6516 provides a wide range of gate voltage levels and gate drive currents, making it suited for a variety of designs. The device can be used in low-side, high-side, half-bridge and active OR configurations, making it ideal for both synchronous and asynchronous systems. The wide range of available gate voltages allows the device to be used in applications with either low or high logic levels. In applications where a high gate voltage is needed, the integrated driver will provide the power reduced gate drive voltage.

The AON6516’s ability to provide high speed switching, low-on state resistance, and low power dissipation makes it an ideal solution for a wide range of power management applications. With its wide range of available gate voltages, it can be used in low-side, high-side and active OR configurations, making it suitable for synchronous and asynchronous systems. The integrated protection circuits ensure that the device is protected from common fault conditions. Finally, its low gate drive power requirements make it well suited for battery-powered and other low power electronics.

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