AON6558 Allicdata Electronics
Allicdata Part #:

785-1670-2-ND

Manufacturer Part#:

AON6558

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 30A 8DFN
More Detail: N-Channel 30V 25A (Ta), 28A (Tc) 5W (Ta), 24W (Tc)...
DataSheet: AON6558 datasheetAON6558 Datasheet/PDF
Quantity: 6000
1 +: $ 0.09600
10 +: $ 0.09312
100 +: $ 0.09120
1000 +: $ 0.08928
10000 +: $ 0.08640
Stock 6000Can Ship Immediately
$ 0.1
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 24W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1128pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: AlphaMOS
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AON6558 is a high-efficiency, low-voltage, and small-Size super-junction deep trench metal-oxide-semiconductor field-effect transistor (DTMOSFET). It was introduced by Advanced Power Technology Corporation in 2020 and is commonly used to provide efficient and optimized power delivery for a variety of high power applications.

First of all, AON6558 provides the best performance for ultra-low gate threshold voltage (VGS). It is capable of being turned on quickly at gate voltage as low as 0.75V. At the same time, it also has a very low forward body diode voltage drop. This means that its power dissipation is reduced and it delivers high efficiency.

In addition to its dynamic efficiency, AON6558 is also optimized for low thermal resistance. With its high-performance packaging, it features a low on-resistance and on-resistance per millimeter. This is due to its layout design, which enhances its on-resistance by limiting the maximum voltage drop before the on-resistance area is reached. The combination of low thermal resistance and low on-resistance per unit area enables AON6558 to maximize the performance of thermal management.

Another impressive feature of AON6558 is its advanced integrated protection system. This system can detect an excessive rise in current and automatically forces the device into a safe operating zone. Furthermore, this advanced system provides over-voltage protection, which can prevent the transistor from undergoing a catastrophic breakdown. Also, it offers built-in ESD protection and reverse bias protection, providing extra reliability in applications such as automotive and medical.

The working principle of AON6558 is quite simple. Upon application of appropriate gate voltage, the voltage across the drain and the source channels is set and the drain current begins to flow. This current then passes through the MOSFET, causing it to act as an active switch. When the gate voltage is increased, the channel narrows and this reduces the amount of current flow. As a result, the power dissipated by the transistor is also reduced and efficiency is improved.

To conclude, AON6558 is a high-efficiency, low-voltage, and small-Size super-junction deep trench metal-oxide-semiconductor field-effect transistor (DTMOSFET). It can provide ultra-low gate threshold voltage and has a low forward body diode voltage drop. It also has a low thermal resistance and an advanced integrated protection system. The working principle of AON6558 is quite simple, where a gate voltage and current flow through the MOSFET, causing it to act as an active switch. All in all, AON6558 is a great choice for applications such as automotive and medical.

The specific data is subject to PDF, and the above content is for reference

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