AOT20C60

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	463W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3440pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	74nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	250 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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AOT20C60 application field and working principle

AOT20C60 is an enhancement-mode vertical power MOSFET with a maximum drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 4A. The two main characteristics of this device are its low on-resistance and high energy efficiency.The AOT20C60 is designed for use in a wide range of high-power applications, such as DC/DC converters, inverters, motor controllers and other power management circuits. Generally, the advantages of using AOT20C60 as a power MOSFET include fast switching speed, low gate charge, and low power dissipation. The AOT20C60’s fast switching speed is due to its short channel length, which allows for faster charge transfer between the drain and source terminals. Additionally, the MOSFET’s low gate charge ensures that it can be quickly turned on and off. Low power dissipation can be achieved by incorporating an low drain-source on-resistance. AOT20C60 is constructed using a vertical channel design, which also provides benefits such as high voltage ratings and high drain current levels. Typically, vertically designed channels are narrower than those of a traditional MOSFET design, meaning that the channel length can be reduced. This, in turn, decreases the resistance between the drain and the source, allowing the device to provide higher efficiency. Consequently, the device’s low on-resistance contributes to its high energy efficiency. Furthermore, the AOT20C60 power MOSFET’s high voltage rating includes a maximum drain-source breakdown voltage of 20V. Breakdown voltage is the voltage at which a device’s gate-source barrier is broken down and the current starts to flow through it. Typically, the breakdown voltage of a MOSFET needs to be higher than the voltage at which the device is operated. Therefore, this device’s high voltage rating ensures that the device can operate in high power applications. Finally, the AOT20C60 offers a maximum drain current of 4A. Typically, the higher the drain current, the more power a device can control. Therefore, this device’s high drain current allows it to control high power levels efficiently. Overall, the AOT20C60 is an ideal choice for a wide range of high power applications due to its fast switching speed, low gate charge, low power dissipation, high voltage rating, and high drain current levels.

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