Allicdata Part #: | AOT288L-ND |
Manufacturer Part#: |
AOT288L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N CH 80V 10.5A TO220 |
More Detail: | N-Channel 80V 10.5A (Ta), 46A (Tc) 2.1W (Ta), 93.5... |
DataSheet: | AOT288L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 93.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1871pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Ta), 46A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOT288L is one of the most popular and commonly used power control semiconductor components within the semiconductor industry. It is an ultra low voltage FMOS (Field-Effect Transistor) component, with features and benefits making it a cost-effective and efficient source of power control to various industries. This paper will provide a comprehensive overview of the application field and working principle of the AOT288L component.
The AOT288L is highly recommended for applications that require low-voltage, low RDS (ON) power control capability. In addition, it is also well suited for MEMS (Micro-Electro Mechanical Systems), LCD drivers, power switching, and power management uses. It also provides efficient power control as well as high current carrying capabilities.
The AOT288L produces ultra-low gate capacitance and RDS (ON) current to provide the best electrical performance and low conduction losses when driving the gate. It has a low maximum duty cycle and requires a lower input voltage than traditional MOSFETS. With these features, the AOT288L is well suited for level shifting, brushless motor drivers, polarity switching applications and high-accuracy low-input voltage analog functions.
The AOT288L\'s working principle is based on the well-known principle of field effect transistor (FET) operation. FETs employ a field effect to control the operation of a transistor. The gate of the FET forms a capacitor or an insulated gate, which, when driven by a control voltage, creates a field effect that modulates the flow of current through the drain and source. Depending on the polarity of the input voltage, the transistor will either turn on or turn off the current. This is how FETs are typically used to control the flow of current in various applications.
When the AOT288L is used, its low maximum duty cycle and ultra-low gate capacitance reduce current drain on the gate, thus allowing for higher power management efficiency. This also enables the AOT288L to supply higher currents through the drain and source, further contributing to its high levels of power control. All these features make the AOT288L an ideal choice for applications requiring low-voltage, low-drain, and low-capacitance, high-power control semiconductor components.
The AOT288L is a versatile component that can be easily integrated into a wide range of applications. Its multiple advantages and cost-effectiveness make it one of the most widely used components in the field of power control. Its ultra-low gate capacitance and RDS (ON) current, combined with its low-voltage, low-drain, and low-capacitance features, enable it to be a highly efficient source of power control in various applications.
The specific data is subject to PDF, and the above content is for reference
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