AOT29S50L

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AOT29S50L is widely used in various applications and control circuitry, such as audio amplifiers, projectors, HVAC systems, LED drivers, lighting systems, power supplies and industrial automation. It is a 2.5W, 30V, single enhancement mode metal oxide semiconductor field effect transistor (MOSFET) with a defined avalanche breakdown voltage.

AOT29S50L is a low voltage switch featuring a Gate-Source voltage (VGS) of 6 to +/-20V and 2.8A of drain current (ID) at room temperature. Its low on-resistance RDS(ON) has a maximum of 0.36ohms, which makes it an ideal choice for low power applications. Its high-frequency performance is further improved by the low internal capacitances and the low Miller capacitance.

The working principle of an AOT29S50L is based on the capacitive coupling between the drain and source of the MOSFET. When a voltage is applied to the gate, an electrostatic field is generated between the gate and drain and a voltage builds up across the gate and drain. This voltage, called the “gate-source voltage” (VGS), increases with greater gate voltage, thus increasing the drain current ID. When VGS is exceeded, the drain current becomes much larger than the gate current and the MOSFET is in the “on” state. Conversely, when the gate and drain voltages become equal, the MOSFET is in the “off” state.

AOT29S50L is particularly suitable for applications requiring fast switching times, high blocking voltage, high current gain and low drain-source capacitance. It is also used in linear applications due to its low supply voltage. The maximum drain-source voltage of the device is 30V, and the maximum drain current is 2.8A, making it a good choice for high power applications.

Overall, the AOT29S50L is an efficient, low voltage, single enhancement mode MOSFET with various features that make it suitable for a wide range of applications. It is especially suited to low-power, high-frequency applications due to its low internal capacitances, low Miller capacitance and high switching times. It has a very low on-resistance RDS(ON) of 0.36ohms, which makes it an ideal choice for applications requiring low power, and a maximum drain-source voltage of 30V, making it an ideal choice for low-voltage and high power applications.

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