AOT296L

Vgs(th) (Max) @ Id:	3.4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 107W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2785pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	10 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	9.5A (Ta), 70A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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AOT296L Application Field and Working PrincipleAOT296L is an advanced N-channel MOSFET (metal oxide semiconductor field-effect transistor) designed for use in consumer electronic devices such as switching power supplies, LED drivers, and home appliance products. It offers low on-resistance along with logic-level compatible gate characteristics and low gate charge. This makes it most suitable for high-efficiency power switching application with low-voltage drop.The AOT296L, also known as a PowerTrench MOSFET, is an enhancement-mode device, meaning it operates with a ‘positive’ gate-to-source voltage. The defining feature of MOSFETs is their ability to be switched on and off with the application of an electrical charge, or “gate” signal. This is in contrast to bipolar transistors, which require an alternating current signal, or “bias” voltage to operate.AOT296L features a maximum drain-source voltage of 20V, maximum drain-source On-State Resistance of 1.3mΩ, a maximum junction temperature of 175℃ and an Avalanche energy limited specified per JESD-17. This means that this device can be used for switching mode power supply, DC/DC converter, etc.At the core of the AOT296L is a vertical N-channel MOSFET of large size, wherein VDS and RDS(on) are ensured even at low VGS. The PowerTrench® is a unique structure which is composed of two interconnected \'fingers\', and provides the device with low on-resistance, allowing it to efficiently transfer energy between two points. This structure also ensures that RDS(on) is low and consistent over a wide temperature range. The unique structure provides superior performance over other MOSFETs.In operation, the AOT296L will be controlled by a microcontroller, which can be used to switch the gate signal on and off. The logic-level input signal will allow the FET to turn on and off based on gate voltage. During normal operation, this gate signal is applied at 5V or 10V. When the signal is applied, a small current flows into the gate. This current passes through the PowerTrench and changes the voltage on the gate of the MOSFET. This causes the FET to turn on and current to flow from the drain to the source.When the gate signal is removed, the FET will turn off and no current will flow. The voltage on the gate will return to its original level, and the FET will be ready to be switched on again. This process is known as switching, and the device is referred to as a “power switch”.The AOT296L is designed for use in many electronics applications, such as power switching, DC/DC converters, and home appliances. It is designed to have low on-resistance, low gate charge, high efficiency, and to be logic-level compatible. This device can be used in a wide variety of applications, making it one of the most versatile power transistors on the market today.

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