Allicdata Part #: | 785-1513-5-ND |
Manufacturer Part#: |
AOT22N50L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 500V 22A TO220 |
More Detail: | N-Channel 500V 22A (Tc) 417W (Tc) Through Hole TO-... |
DataSheet: | AOT22N50L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 83nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3710pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 417W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 11A, 10V |
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The AOT22N50L is a single-level Field Effect Transistor (FET) that is used in a wide variety of applications. It is an active circuit element that enables a user to control the flow of currents and voltages in an active circuit. The AOT22N50L is a source/drain type FET which is used to select one among several inputs, while offering an ultra low on-resistance. This type of FET is also known as a logic gate-type FET.
The AOT22N50L is constructed with a single-channel field effect-gate in a mesa structure. The gate consists of a series of copper bars connected by a conducting gate. The gate is isolated from the substrate and the device is further protected by an insulating layer. The AOT22N50L also features a high gate drive which ensures high performance of the device.
This type of FET is typically used in circuits that require switchable capacitors or resistors. In these circuits, the field effect-gate is used to switch the capacitor or resistor on or off. When the gate is switched on, the flow of current or voltage through the circuit is altered. When the gate is switched off, the current or voltage flow is blocked. This type of device is also used in applications that require precise control of current or voltage levels.
The AOT22N50L is also used in applications that require high-frequency switching. This type of FET exhibits a deep modulation ability and is capable of switching frequencies up to one million Hertz. In high-frequency switching applications, the AOT22N50L offers excellent performance and is highly reliable. This type of FET is also often used in RF circuits where the switching frequency needs to be very precise.
The working principle of a FET is based on the phenomenon of capacitive coupling. This phenomenon occurs when a conducting layer is placed on an insulating layer. When a voltage is applied to the conducting layer, an electric field is created around it. This electric field then induces a charge on the insulating layer, creating a capacitive coupling that is used to alter the flow of current or voltage in the circuit.
The AOT22N50L is a versatile FET that can be used in a wide variety of applications. It is an excellent choice for switching, controlling current or voltage levels, and providing precise high-frequency signal switching. The AOT22N50L is a reliable, high performance FET that can be used to enhance circuit performance.
The specific data is subject to PDF, and the above content is for reference
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