| Allicdata Part #: | 785-1514-5-ND |
| Manufacturer Part#: |
AOT25S65L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 650V 25A TO220 |
| More Detail: | N-Channel 650V 25A (Tc) 357W (Tc) Through Hole TO-... |
| DataSheet: |  AOT25S65L Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | aMOS™ |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 12.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 26.4nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1278pF @ 100V |
| FET Feature: | -- |
| Power Dissipation (Max): | 357W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
Description
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AOT25S65L is a high-voltage low gate-charge N-channel MOSFET suitable for off-line, DC-DC and AC-DC conversion-tool application. It has an excellent RDS(ON) and maximum current rating of 240A at 25°C and 176A at 150°C. It uses an advanced trench technology to provide excellent RDS(ON), superior avalanche characteristics, and low gate charge. Application field: AOT25S65L is mainly used in off-line, DC-DC and AC-DC conversion and other related applications. Including:- General purpose power conversion;- Low voltage and high current motor drives;- DC-DC switching regulators;- PFC / PFC conditioning; - Server power supplies;- Telecom equipment;- Uninterruptible power supplies (UPS). Working principle: The AOT25S65L MOSFET is an N-channel type MOSFET with a voltage rating of 65V and an RDS(ON) of 0.0025 ohms. It uses a simple four-terminal design, consisting of a source, drain, gate and body (or substrate) terminal. The source and drain terminals are responsible for carrying the load current, and the gate terminal is responsible for controlling the flow of current internally by allowing or preventing the flow of electrons between the source and the drain. The MOSFET is a voltage-controlled device, and does not require a high current level from the gate circuit to control the current path from the source to the drain. To open the MOSFET, a positive voltage needs to be applied on the gate terminal with respect to the source terminal. This positive voltage creates an electric field between the gate and the source which, in turn, attracts electrons from the source and drains them towards the gate. This creates an "inversion layer" through which current can no longer flow. To close the MOSFET and allow current to flow, the voltage applied to the gate needs to be reduced. This reduces the electric field between the gate and the source, allowing current to flow between the source and the drain. This is how the AOT25S65L MOSFET works as a switch.AOT25S65L has a wide range of applications due to its low gate charge and low RDS(ON). It is a low power device that can be used for many power conversion applications. Its low RDS(ON) makes it suitable for high efficiency applications, and its low gate charge makes it suitable for high frequency applications.Overall, AOT25S65L is an ideal choice for various power conversion applications. It is a reliable, efficient and cost effective solution that can provide exceptional performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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